COMPOSITION FOR RESIST UNDERLAYER AND PATTERN FORMATION METHOD USING SAME
The present invention relates to: a composition for a resist underlayer, which comprises a polymer having a cyclic backbone including two or more nitrogen atoms in a ring, a compound represented by chemical formula 1, and a solvent; and to a pattern formation method using the composition for a resis...
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| creator | KWON, Soonhyung JIN, Hwayoung BAE, Shinhyo CHON, Minki KIM, Minsoo BAEK, Jaeyeol KIM, Seongjin CHOI, Yoojeong PARK, Hyeon SONG, Daeseok |
| description | The present invention relates to: a composition for a resist underlayer, which comprises a polymer having a cyclic backbone including two or more nitrogen atoms in a ring, a compound represented by chemical formula 1, and a solvent; and to a pattern formation method using the composition for a resist underlayer. Chemical formula 1 is as defined in the specification.
La présente invention concerne : une composition pour sous-couche de réserve, qui comprend un polymère ayant un squelette cyclique comprenant deux atomes d'azote ou plus dans un cycle, un composé représenté par la formule chimique 1, et un solvant ; et un procédé de formation de motif faisant appel à ladite composition pour sous-couche de réserve. La formule chimique 1 est telle que définie dans la description.
고리 내 질소 원자를 2개 이상 포함하는 고리 골격을 갖는 중합체, 하기 화학식 1로 표시되는 화합물, 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성 방법에 관한 것이다: 상기 화학식 1의 정의는 명세서 내에 기재한 바와 같다. |
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La présente invention concerne : une composition pour sous-couche de réserve, qui comprend un polymère ayant un squelette cyclique comprenant deux atomes d'azote ou plus dans un cycle, un composé représenté par la formule chimique 1, et un solvant ; et un procédé de formation de motif faisant appel à ladite composition pour sous-couche de réserve. La formule chimique 1 est telle que définie dans la description.
고리 내 질소 원자를 2개 이상 포함하는 고리 골격을 갖는 중합체, 하기 화학식 1로 표시되는 화합물, 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성 방법에 관한 것이다: 상기 화학식 1의 정의는 명세서 내에 기재한 바와 같다.</description><language>eng ; fre ; kor</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CHEMISTRY ; CINEMATOGRAPHY ; COMPOSITIONS BASED THEREON ; COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; METALLURGY ; ORGANIC MACROMOLECULAR COMPOUNDS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220527&DB=EPODOC&CC=WO&NR=2022108231A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220527&DB=EPODOC&CC=WO&NR=2022108231A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KWON, Soonhyung</creatorcontrib><creatorcontrib>JIN, Hwayoung</creatorcontrib><creatorcontrib>BAE, Shinhyo</creatorcontrib><creatorcontrib>CHON, Minki</creatorcontrib><creatorcontrib>KIM, Minsoo</creatorcontrib><creatorcontrib>BAEK, Jaeyeol</creatorcontrib><creatorcontrib>KIM, Seongjin</creatorcontrib><creatorcontrib>CHOI, Yoojeong</creatorcontrib><creatorcontrib>PARK, Hyeon</creatorcontrib><creatorcontrib>SONG, Daeseok</creatorcontrib><title>COMPOSITION FOR RESIST UNDERLAYER AND PATTERN FORMATION METHOD USING SAME</title><description>The present invention relates to: a composition for a resist underlayer, which comprises a polymer having a cyclic backbone including two or more nitrogen atoms in a ring, a compound represented by chemical formula 1, and a solvent; and to a pattern formation method using the composition for a resist underlayer. Chemical formula 1 is as defined in the specification.
La présente invention concerne : une composition pour sous-couche de réserve, qui comprend un polymère ayant un squelette cyclique comprenant deux atomes d'azote ou plus dans un cycle, un composé représenté par la formule chimique 1, et un solvant ; et un procédé de formation de motif faisant appel à ladite composition pour sous-couche de réserve. La formule chimique 1 est telle que définie dans la description.
고리 내 질소 원자를 2개 이상 포함하는 고리 골격을 갖는 중합체, 하기 화학식 1로 표시되는 화합물, 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성 방법에 관한 것이다: 상기 화학식 1의 정의는 명세서 내에 기재한 바와 같다.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CHEMISTRY</subject><subject>CINEMATOGRAPHY</subject><subject>COMPOSITIONS BASED THEREON</subject><subject>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>METALLURGY</subject><subject>ORGANIC MACROMOLECULAR COMPOUNDS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>THEIR PREPARATION OR CHEMICAL WORKING-UP</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPB09vcN8A_2DPH091Nw8w9SCHIN9gwOUQj1c3EN8nGMdA1ScPRzUQhwDAlxDQKr8HUEq_V1DfHwd1EIDfb0c1cIdvR15WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8eH-RgZGRoYGFkbGho6GxsSpAgAWVy5H</recordid><startdate>20220527</startdate><enddate>20220527</enddate><creator>KWON, Soonhyung</creator><creator>JIN, Hwayoung</creator><creator>BAE, Shinhyo</creator><creator>CHON, Minki</creator><creator>KIM, Minsoo</creator><creator>BAEK, Jaeyeol</creator><creator>KIM, Seongjin</creator><creator>CHOI, Yoojeong</creator><creator>PARK, Hyeon</creator><creator>SONG, Daeseok</creator><scope>EVB</scope></search><sort><creationdate>20220527</creationdate><title>COMPOSITION FOR RESIST UNDERLAYER AND PATTERN FORMATION METHOD USING SAME</title><author>KWON, Soonhyung ; JIN, Hwayoung ; BAE, Shinhyo ; CHON, Minki ; KIM, Minsoo ; BAEK, Jaeyeol ; KIM, Seongjin ; CHOI, Yoojeong ; PARK, Hyeon ; SONG, Daeseok</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2022108231A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; kor</language><creationdate>2022</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CHEMISTRY</topic><topic>CINEMATOGRAPHY</topic><topic>COMPOSITIONS BASED THEREON</topic><topic>COMPOSITIONS OF MACROMOLECULAR COMPOUNDS</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>METALLURGY</topic><topic>ORGANIC MACROMOLECULAR COMPOUNDS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>THEIR PREPARATION OR CHEMICAL WORKING-UP</topic><toplevel>online_resources</toplevel><creatorcontrib>KWON, Soonhyung</creatorcontrib><creatorcontrib>JIN, Hwayoung</creatorcontrib><creatorcontrib>BAE, Shinhyo</creatorcontrib><creatorcontrib>CHON, Minki</creatorcontrib><creatorcontrib>KIM, Minsoo</creatorcontrib><creatorcontrib>BAEK, Jaeyeol</creatorcontrib><creatorcontrib>KIM, Seongjin</creatorcontrib><creatorcontrib>CHOI, Yoojeong</creatorcontrib><creatorcontrib>PARK, Hyeon</creatorcontrib><creatorcontrib>SONG, Daeseok</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KWON, Soonhyung</au><au>JIN, Hwayoung</au><au>BAE, Shinhyo</au><au>CHON, Minki</au><au>KIM, Minsoo</au><au>BAEK, Jaeyeol</au><au>KIM, Seongjin</au><au>CHOI, Yoojeong</au><au>PARK, Hyeon</au><au>SONG, Daeseok</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>COMPOSITION FOR RESIST UNDERLAYER AND PATTERN FORMATION METHOD USING SAME</title><date>2022-05-27</date><risdate>2022</risdate><abstract>The present invention relates to: a composition for a resist underlayer, which comprises a polymer having a cyclic backbone including two or more nitrogen atoms in a ring, a compound represented by chemical formula 1, and a solvent; and to a pattern formation method using the composition for a resist underlayer. Chemical formula 1 is as defined in the specification.
La présente invention concerne : une composition pour sous-couche de réserve, qui comprend un polymère ayant un squelette cyclique comprenant deux atomes d'azote ou plus dans un cycle, un composé représenté par la formule chimique 1, et un solvant ; et un procédé de formation de motif faisant appel à ladite composition pour sous-couche de réserve. La formule chimique 1 est telle que définie dans la description.
고리 내 질소 원자를 2개 이상 포함하는 고리 골격을 갖는 중합체, 하기 화학식 1로 표시되는 화합물, 및 용매를 포함하는 레지스트 하층막용 조성물; 그리고 상기 레지스트 하층막용 조성물을 이용하는 패턴형성 방법에 관한 것이다: 상기 화학식 1의 정의는 명세서 내에 기재한 바와 같다.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CHEMISTRY CINEMATOGRAPHY COMPOSITIONS BASED THEREON COMPOSITIONS OF MACROMOLECULAR COMPOUNDS ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR METALLURGY ORGANIC MACROMOLECULAR COMPOUNDS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS THEIR PREPARATION OR CHEMICAL WORKING-UP |
| title | COMPOSITION FOR RESIST UNDERLAYER AND PATTERN FORMATION METHOD USING SAME |
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