SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR

A semiconductor device and a manufacturing method therefor, relating to the technical field of semiconductors. The manufacturing method comprises: providing a substrate (1), a film layer stacking structure (2) being formed on the substrate (1); etching the film layer stacking structure (2) to form a first area (A) comprising a through hole (221) exposing the substrate (1) and a second area (B) comprising a hole section not exposing the substrate (1); and etching the second area (B) for patterning, and removing the film layer stacking structure (2) in the second area (B). The manufacturing method for the semiconductor device can prevent capacitor failure and improve capacitor stability. Dispositif semi-conducteur et son procédé de fabrication se rapportant au domaine technique des semi-conducteurs. Le procédé de fabrication comprend les étapes consistant à : fournir un substrat (1), une structure d'empilement de couches de film (2) étant formée sur le substrat (1) ; graver la structure d'empilement de couches