METHOD FOR PREPARING SILICON WAFER HAVING ROUGH SURFACE, AND SILICON WAFER
Provided is a method for preparing a silicon wafer having a rough surface: depositing a porous oxide film layer on a surface of a plane-polished silicon; then etching a first silicon planar layer using XeF2 vapor-phase etching; the XeF2 gas passing through the porous oxide layer, then etching the fi...
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| creator | LAI, Kah Keen GOH, Wooi Cheang LOO, Li Eng |
| description | Provided is a method for preparing a silicon wafer having a rough surface: depositing a porous oxide film layer on a surface of a plane-polished silicon; then etching a first silicon planar layer using XeF2 vapor-phase etching; the XeF2 gas passing through the porous oxide layer, then etching the first silicon planar layer, to form an irregularly etched first silicon planar layer.
L'invention concerne un procédé de préparation d'une tranche de silicium ayant une surface rugueuse : le dépôt d'une couche de film d'oxyde poreux sur une surface d'un silicium poli plan; puis la gravure d'une première couche plane de silicium à l'aide d'une gravure en phase vapeur XeF2; le gaz XeF2 traversant la couche d'oxyde poreux, puis la gravure de la première couche plane de silicium, pour former une première couche plane de silicium gravée de manière irrégulière.
一种具有粗糙表面的硅片的制备方法，在经过平面抛光的硅的表面上沉积一层多孔氧化物膜层，然后采用XeF2气相刻蚀的方式对第一硅平面层进行刻蚀，XeF2气体穿过多孔氧化物膜层后再对第一硅平面层进行刻蚀，形成不规则的刻蚀第一硅平面层。 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2022047977A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2022047977A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2022047977A13</originalsourceid><addsrcrecordid>eNrjZPDydQ3x8HdRcPMPUggIcg1wDPL0c1cI9vTxdPb3Uwh3dHMNUvBwDAMJBvmHunsoBIcGuTk6u-ooOPq5oKrjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBkZGBibmlubmjobGxKkCAPbiLhc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD FOR PREPARING SILICON WAFER HAVING ROUGH SURFACE, AND SILICON WAFER</title><source>esp@cenet</source><creator>LAI, Kah Keen ; GOH, Wooi Cheang ; LOO, Li Eng</creator><creatorcontrib>LAI, Kah Keen ; GOH, Wooi Cheang ; LOO, Li Eng</creatorcontrib><description>Provided is a method for preparing a silicon wafer having a rough surface: depositing a porous oxide film layer on a surface of a plane-polished silicon; then etching a first silicon planar layer using XeF2 vapor-phase etching; the XeF2 gas passing through the porous oxide layer, then etching the first silicon planar layer, to form an irregularly etched first silicon planar layer.
L'invention concerne un procédé de préparation d'une tranche de silicium ayant une surface rugueuse : le dépôt d'une couche de film d'oxyde poreux sur une surface d'un silicium poli plan; puis la gravure d'une première couche plane de silicium à l'aide d'une gravure en phase vapeur XeF2; le gaz XeF2 traversant la couche d'oxyde poreux, puis la gravure de la première couche plane de silicium, pour former une première couche plane de silicium gravée de manière irrégulière.
一种具有粗糙表面的硅片的制备方法，在经过平面抛光的硅的表面上沉积一层多孔氧化物膜层，然后采用XeF2气相刻蚀的方式对第一硅平面层进行刻蚀，XeF2气体穿过多孔氧化物膜层后再对第一硅平面层进行刻蚀，形成不规则的刻蚀第一硅平面层。</description><language>chi ; eng ; fre</language><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220310&DB=EPODOC&CC=WO&NR=2022047977A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220310&DB=EPODOC&CC=WO&NR=2022047977A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAI, Kah Keen</creatorcontrib><creatorcontrib>GOH, Wooi Cheang</creatorcontrib><creatorcontrib>LOO, Li Eng</creatorcontrib><title>METHOD FOR PREPARING SILICON WAFER HAVING ROUGH SURFACE, AND SILICON WAFER</title><description>Provided is a method for preparing a silicon wafer having a rough surface: depositing a porous oxide film layer on a surface of a plane-polished silicon; then etching a first silicon planar layer using XeF2 vapor-phase etching; the XeF2 gas passing through the porous oxide layer, then etching the first silicon planar layer, to form an irregularly etched first silicon planar layer.
L'invention concerne un procédé de préparation d'une tranche de silicium ayant une surface rugueuse : le dépôt d'une couche de film d'oxyde poreux sur une surface d'un silicium poli plan; puis la gravure d'une première couche plane de silicium à l'aide d'une gravure en phase vapeur XeF2; le gaz XeF2 traversant la couche d'oxyde poreux, puis la gravure de la première couche plane de silicium, pour former une première couche plane de silicium gravée de manière irrégulière.
一种具有粗糙表面的硅片的制备方法，在经过平面抛光的硅的表面上沉积一层多孔氧化物膜层，然后采用XeF2气相刻蚀的方式对第一硅平面层进行刻蚀，XeF2气体穿过多孔氧化物膜层后再对第一硅平面层进行刻蚀，形成不规则的刻蚀第一硅平面层。</description><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPDydQ3x8HdRcPMPUggIcg1wDPL0c1cI9vTxdPb3Uwh3dHMNUvBwDAMJBvmHunsoBIcGuTk6u-ooOPq5oKrjYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBkZGBibmlubmjobGxKkCAPbiLhc</recordid><startdate>20220310</startdate><enddate>20220310</enddate><creator>LAI, Kah Keen</creator><creator>GOH, Wooi Cheang</creator><creator>LOO, Li Eng</creator><scope>EVB</scope></search><sort><creationdate>20220310</creationdate><title>METHOD FOR PREPARING SILICON WAFER HAVING ROUGH SURFACE, AND SILICON WAFER</title><author>LAI, Kah Keen ; GOH, Wooi Cheang ; LOO, Li Eng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2022047977A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng ; fre</language><creationdate>2022</creationdate><topic>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>LAI, Kah Keen</creatorcontrib><creatorcontrib>GOH, Wooi Cheang</creatorcontrib><creatorcontrib>LOO, Li Eng</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAI, Kah Keen</au><au>GOH, Wooi Cheang</au><au>LOO, Li Eng</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD FOR PREPARING SILICON WAFER HAVING ROUGH SURFACE, AND SILICON WAFER</title><date>2022-03-10</date><risdate>2022</risdate><abstract>Provided is a method for preparing a silicon wafer having a rough surface: depositing a porous oxide film layer on a surface of a plane-polished silicon; then etching a first silicon planar layer using XeF2 vapor-phase etching; the XeF2 gas passing through the porous oxide layer, then etching the first silicon planar layer, to form an irregularly etched first silicon planar layer.
L'invention concerne un procédé de préparation d'une tranche de silicium ayant une surface rugueuse : le dépôt d'une couche de film d'oxyde poreux sur une surface d'un silicium poli plan; puis la gravure d'une première couche plane de silicium à l'aide d'une gravure en phase vapeur XeF2; le gaz XeF2 traversant la couche d'oxyde poreux, puis la gravure de la première couche plane de silicium, pour former une première couche plane de silicium gravée de manière irrégulière.
一种具有粗糙表面的硅片的制备方法，在经过平面抛光的硅的表面上沉积一层多孔氧化物膜层，然后采用XeF2气相刻蚀的方式对第一硅平面层进行刻蚀，XeF2气体穿过多孔氧化物膜层后再对第一硅平面层进行刻蚀，形成不规则的刻蚀第一硅平面层。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS TRANSPORTING |
| title | METHOD FOR PREPARING SILICON WAFER HAVING ROUGH SURFACE, AND SILICON WAFER |
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