SEMICONDUCTOR STRUCTURE MANUFACTURING METHOD

The present application provides a semiconductor structure manufacturing method, comprising: providing a substrate; forming a barrier layer above the substrate; forming a sacrificial layer above the barrier layer; using a photolithography process to form an opening pattern above the sacrificial layer; with the barrier layer as an etch stop layer, etching the sacrificial layer according to the opening pattern so as to form a first trench; filling the first trench with a dielectric layer material; with the barrier layer as an etch stop layer, etching the sacrificial layer so as to form a second trench; filling the second trench with a hard mask layer material; with the barrier layer as an etch stop layer, etching the dielectric layer material, forming a hard mask layer. La présente invention concerne un procédé de fabrication de structure semi-conductrice, consistant à : fournir un substrat ; former une couche barrière au-dessus du substrat ; former une couche sacrificielle au-dessus de la couche barrière ; uti