PLASMA CHAMBER TARGET FOR REDUCING DEFECTS IN WORKPIECE DURING DIELECTRIC SPUTTERING

Methods and apparatus for plasma chamber target for reducing defects in workpiece during dielectric sputtering are provided. For example, a dielectric sputter deposition target can comprise a dielectric compound having a predefined average grain size ranging from approximately 65 µm to 500 µm, where...

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Bibliographische Detailangaben
Hauptverfasser:	LEI, Jianxin, WANG, Rongjun, WANG, Xiaodong
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods and apparatus for plasma chamber target for reducing defects in workpiece during dielectric sputtering are provided. For example, a dielectric sputter deposition target can comprise a dielectric compound having a predefined average grain size ranging from approximately 65 µm to 500 µm, wherein the dielectric compound is at least one of magnesium oxide or aluminum oxide. L'invention concerne des procédés et appareils destinés à une cible de chambre à plasma permettant de réduire les défauts dans une pièce pendant une pulvérisation cathodique de diélectrique. Par exemple, une cible de dépôt par pulvérisation cathodique de diélectrique peut comprendre un composé diélectrique ayant une taille de grain moyenne prédéfinie allant d'environ 65 µm à 500 µm, le composé diélectrique étant de l'oxyde de magnésium et/ou de l'oxyde d'aluminium.