RAPID HYBRID CHEMICAL VAPOR DEPOSITION FOR PEROVSKITE SOLAR MODULES
Systems and methods for performing a rapid hybrid chemical vapor deposition are described herein. In an embodiment, first type of precursor materials is deposited on a substrate. The substrate is placed in a receptacle of a heating device, the heating device configured to provide heat to at least a...
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| creator | QI, Yabing ONO, Luis Katsuya QIU, Longbin HE, Sisi |
| description | Systems and methods for performing a rapid hybrid chemical vapor deposition are described herein. In an embodiment, first type of precursor materials is deposited on a substrate. The substrate is placed in a receptacle of a heating device, the heating device configured to provide heat to at least a portion of the receptacle. A second type of precursor materials is placed in the receptacle of the heating device such that the organic compound is closer to a gas source of the heating device than the substrate. A gas flow is created through the receptacle of the heating device. The heating component is used to cause of a portion of the receptacle comprising the substrate and the second type of precursor materials. During the heating process, at least a portion of the second type of precursor materials is deposited on at least a portion of the first type of precursor materials.
Des systèmes et des procédés qui permettent d'effectuer un dépôt chimique en phase vapeur hybride rapide sont décrits ici. Dans un mode de réalisation, un premier type de matériaux précurseurs est déposé sur un substrat. Le substrat est placé dans un réceptacle d'un dispositif de chauffage, le dispositif de chauffage étant configuré pour fournir de la chaleur à au moins une partie du réceptacle. Un second type de matériaux précurseurs est placé dans le réceptacle du dispositif de chauffage de telle sorte que le composé organique est plus proche d'une source de gaz du dispositif de chauffage que le substrat. Un flux de gaz est créé à travers le réceptacle du dispositif de chauffage. Le composant chauffant est utilisé pour chauffer une partie du réceptacle comprenant le substrat et le second type de matériaux précurseurs. Pendant le processus de chauffage, au moins une partie du second type de matériaux précurseurs est déposée sur au moins une partie du premier type de matériaux précurseurs. |
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Des systèmes et des procédés qui permettent d'effectuer un dépôt chimique en phase vapeur hybride rapide sont décrits ici. Dans un mode de réalisation, un premier type de matériaux précurseurs est déposé sur un substrat. Le substrat est placé dans un réceptacle d'un dispositif de chauffage, le dispositif de chauffage étant configuré pour fournir de la chaleur à au moins une partie du réceptacle. Un second type de matériaux précurseurs est placé dans le réceptacle du dispositif de chauffage de telle sorte que le composé organique est plus proche d'une source de gaz du dispositif de chauffage que le substrat. Un flux de gaz est créé à travers le réceptacle du dispositif de chauffage. Le composant chauffant est utilisé pour chauffer une partie du réceptacle comprenant le substrat et le second type de matériaux précurseurs. Pendant le processus de chauffage, au moins une partie du second type de matériaux précurseurs est déposée sur au moins une partie du premier type de matériaux précurseurs.</description><language>eng ; fre</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; CRYSTAL GROWTH ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211216&DB=EPODOC&CC=WO&NR=2021250499A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211216&DB=EPODOC&CC=WO&NR=2021250499A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>QI, Yabing</creatorcontrib><creatorcontrib>ONO, Luis Katsuya</creatorcontrib><creatorcontrib>QIU, Longbin</creatorcontrib><creatorcontrib>HE, Sisi</creatorcontrib><title>RAPID HYBRID CHEMICAL VAPOR DEPOSITION FOR PEROVSKITE SOLAR MODULES</title><description>Systems and methods for performing a rapid hybrid chemical vapor deposition are described herein. In an embodiment, first type of precursor materials is deposited on a substrate. The substrate is placed in a receptacle of a heating device, the heating device configured to provide heat to at least a portion of the receptacle. A second type of precursor materials is placed in the receptacle of the heating device such that the organic compound is closer to a gas source of the heating device than the substrate. A gas flow is created through the receptacle of the heating device. The heating component is used to cause of a portion of the receptacle comprising the substrate and the second type of precursor materials. During the heating process, at least a portion of the second type of precursor materials is deposited on at least a portion of the first type of precursor materials.
Des systèmes et des procédés qui permettent d'effectuer un dépôt chimique en phase vapeur hybride rapide sont décrits ici. Dans un mode de réalisation, un premier type de matériaux précurseurs est déposé sur un substrat. Le substrat est placé dans un réceptacle d'un dispositif de chauffage, le dispositif de chauffage étant configuré pour fournir de la chaleur à au moins une partie du réceptacle. Un second type de matériaux précurseurs est placé dans le réceptacle du dispositif de chauffage de telle sorte que le composé organique est plus proche d'une source de gaz du dispositif de chauffage que le substrat. Un flux de gaz est créé à travers le réceptacle du dispositif de chauffage. Le composant chauffant est utilisé pour chauffer une partie du réceptacle comprenant le substrat et le second type de matériaux précurseurs. Pendant le processus de chauffage, au moins une partie du second type de matériaux précurseurs est déposée sur au moins une partie du premier type de matériaux précurseurs.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>CRYSTAL GROWTH</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAOcgzwdFHwiHQKAlLOHq6-ns6OPgphjgH-QQourgH-wZ4hnv5-Cm5AboBrkH9YsLdniKtCsL-PY5CCr79LqI9rMA8Da1piTnEqL5TmZlB2cw1x9tBNLciPTy0uSExOzUstiQ_3NzIwMjQyNTCxtHQ0NCZOFQDpDSyZ</recordid><startdate>20211216</startdate><enddate>20211216</enddate><creator>QI, Yabing</creator><creator>ONO, Luis Katsuya</creator><creator>QIU, Longbin</creator><creator>HE, Sisi</creator><scope>EVB</scope></search><sort><creationdate>20211216</creationdate><title>RAPID HYBRID CHEMICAL VAPOR DEPOSITION FOR PEROVSKITE SOLAR MODULES</title><author>QI, Yabing ; ONO, Luis Katsuya ; QIU, Longbin ; HE, Sisi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021250499A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2021</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>CRYSTAL GROWTH</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>QI, Yabing</creatorcontrib><creatorcontrib>ONO, Luis Katsuya</creatorcontrib><creatorcontrib>QIU, Longbin</creatorcontrib><creatorcontrib>HE, Sisi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>QI, Yabing</au><au>ONO, Luis Katsuya</au><au>QIU, Longbin</au><au>HE, Sisi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RAPID HYBRID CHEMICAL VAPOR DEPOSITION FOR PEROVSKITE SOLAR MODULES</title><date>2021-12-16</date><risdate>2021</risdate><abstract>Systems and methods for performing a rapid hybrid chemical vapor deposition are described herein. In an embodiment, first type of precursor materials is deposited on a substrate. The substrate is placed in a receptacle of a heating device, the heating device configured to provide heat to at least a portion of the receptacle. A second type of precursor materials is placed in the receptacle of the heating device such that the organic compound is closer to a gas source of the heating device than the substrate. A gas flow is created through the receptacle of the heating device. The heating component is used to cause of a portion of the receptacle comprising the substrate and the second type of precursor materials. During the heating process, at least a portion of the second type of precursor materials is deposited on at least a portion of the first type of precursor materials.
Des systèmes et des procédés qui permettent d'effectuer un dépôt chimique en phase vapeur hybride rapide sont décrits ici. Dans un mode de réalisation, un premier type de matériaux précurseurs est déposé sur un substrat. Le substrat est placé dans un réceptacle d'un dispositif de chauffage, le dispositif de chauffage étant configuré pour fournir de la chaleur à au moins une partie du réceptacle. Un second type de matériaux précurseurs est placé dans le réceptacle du dispositif de chauffage de telle sorte que le composé organique est plus proche d'une source de gaz du dispositif de chauffage que le substrat. Un flux de gaz est créé à travers le réceptacle du dispositif de chauffage. Le composant chauffant est utilisé pour chauffer une partie du réceptacle comprenant le substrat et le second type de matériaux précurseurs. Pendant le processus de chauffage, au moins une partie du second type de matériaux précurseurs est déposée sur au moins une partie du premier type de matériaux précurseurs.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | RAPID HYBRID CHEMICAL VAPOR DEPOSITION FOR PEROVSKITE SOLAR MODULES |
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