SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREFOR
A semiconductor apparatus, comprising a semiconductor layer (11), a first doped nitride semiconductor layer arranged on the semiconductor layer (11), a second doped nitride semiconductor layer arranged on the first doped nitride semiconductor layer, and an undoped nitride semiconductor layer (12) lo...
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| creator | LEE, Kyejin WONG, Kingyuen |
| description | A semiconductor apparatus, comprising a semiconductor layer (11), a first doped nitride semiconductor layer arranged on the semiconductor layer (11), a second doped nitride semiconductor layer arranged on the first doped nitride semiconductor layer, and an undoped nitride semiconductor layer (12) located between the semiconductor layer (11) and the first doped nitride semiconductor layer, wherein the undoped nitride semiconductor layer (12) has a first surface that is in contact with the semiconductor layer (11) and a second surface that is in contact with the first doped nitride semiconductor layer.
L'invention concerne un appareil à semi-conducteur comprenant une couche semi-conductrice (11), une première couche semi-conductrice de nitrure dopée disposée sur la couche semi-conductrice (11), une seconde couche semi-conductrice de nitrure dopée disposée sur la première couche semi-conductrice de nitrure dopée, et une couche semi-conductrice de nitrure non dopée (12) située entre la couche semi-conductrice (11 |
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L'invention concerne un appareil à semi-conducteur comprenant une couche semi-conductrice (11), une première couche semi-conductrice de nitrure dopée disposée sur la couche semi-conductrice (11), une seconde couche semi-conductrice de nitrure dopée disposée sur la première couche semi-conductrice de nitrure dopée, et une couche semi-conductrice de nitrure non dopée (12) située entre la couche semi-conductrice (11</description><language>chi ; eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211209&DB=EPODOC&CC=WO&NR=2021243653A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25544,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211209&DB=EPODOC&CC=WO&NR=2021243653A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LEE, Kyejin</creatorcontrib><creatorcontrib>WONG, Kingyuen</creatorcontrib><title>SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREFOR</title><description>A semiconductor apparatus, comprising a semiconductor layer (11), a first doped nitride semiconductor layer arranged on the semiconductor layer (11), a second doped nitride semiconductor layer arranged on the first doped nitride semiconductor layer, and an undoped nitride semiconductor layer (12) located between the semiconductor layer (11) and the first doped nitride semiconductor layer, wherein the undoped nitride semiconductor layer (12) has a first surface that is in contact with the semiconductor layer (11) and a second surface that is in contact with the first doped nitride semiconductor layer.
L'invention concerne un appareil à semi-conducteur comprenant une couche semi-conductrice (11), une première couche semi-conductrice de nitrure dopée disposée sur la couche semi-conductrice (11), une seconde couche semi-conductrice de nitrure dopée disposée sur la première couche semi-conductrice de nitrure dopée, et une couche semi-conductrice de nitrure non dopée (12) située entre la couche semi-conductrice (11</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAMdvX1dPb3cwl1DvEPUnAMCHAMcgwJDVZw9HNR8HX0C3VzdA4JDfL0c1fwdQ3x8HdRCPFwDXJ18w_iYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBkaGRibGZqbGjobGxKkCAFxIKf8</recordid><startdate>20211209</startdate><enddate>20211209</enddate><creator>LEE, Kyejin</creator><creator>WONG, Kingyuen</creator><scope>EVB</scope></search><sort><creationdate>20211209</creationdate><title>SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREFOR</title><author>LEE, Kyejin ; WONG, Kingyuen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021243653A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng ; fre</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, Kyejin</creatorcontrib><creatorcontrib>WONG, Kingyuen</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LEE, Kyejin</au><au>WONG, Kingyuen</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREFOR</title><date>2021-12-09</date><risdate>2021</risdate><abstract>A semiconductor apparatus, comprising a semiconductor layer (11), a first doped nitride semiconductor layer arranged on the semiconductor layer (11), a second doped nitride semiconductor layer arranged on the first doped nitride semiconductor layer, and an undoped nitride semiconductor layer (12) located between the semiconductor layer (11) and the first doped nitride semiconductor layer, wherein the undoped nitride semiconductor layer (12) has a first surface that is in contact with the semiconductor layer (11) and a second surface that is in contact with the first doped nitride semiconductor layer.
L'invention concerne un appareil à semi-conducteur comprenant une couche semi-conductrice (11), une première couche semi-conductrice de nitrure dopée disposée sur la couche semi-conductrice (11), une seconde couche semi-conductrice de nitrure dopée disposée sur la première couche semi-conductrice de nitrure dopée, et une couche semi-conductrice de nitrure non dopée (12) située entre la couche semi-conductrice (11</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD THEREFOR |
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