SEMICONDUCTOR DEVICE
This semiconductor device comprises: an insulating film provided on a substrate; a chlorine-containing semiconductor layer provided adjacent to the insulating film; and a semiconductor region provided adjacent to the chlorine-containing semiconductor layer. The chlorine concentration of the chlorine...
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| creator | MAEDA Tatsurou HORITA Hideki TAKAHASHI Masahiro |
| description | This semiconductor device comprises: an insulating film provided on a substrate; a chlorine-containing semiconductor layer provided adjacent to the insulating film; and a semiconductor region provided adjacent to the chlorine-containing semiconductor layer. The chlorine concentration of the chlorine-containing semiconductor layer is 1.0×1020 atoms/cm3 to 1.0×1022 atoms/cm3, inclusive.
L'invention concerne un dispositif semi-conducteur comprenant : un film isolant disposé sur un substrat ; une couche semi-conductrice contenant du chlore, disposée adjacente au film isolant ; et une zone semi-conductrice disposée adjacente à la couche semi-conductrice contenant du chlore. La concentration de chlore de la couche semi-conductrice contenant du chlore est comprise entre 1,0×1020 atomes/cm3 et 1,0×1022 atomes/cm3, compris.
基板上に設けられた絶縁膜と、絶縁膜に隣接して設けられた塩素含有半導体層と、塩素含有半導体層に隣接して設けられた半導体領域と、を有し、塩素含有半導体層の塩素濃度が１．０×１０２０ａｔｏｍｓ／ｃｍ３以上１．０×１０２２ａｔｏｍｓ／ｃｍ３以下である半導体デバイス。 |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2021241449A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2021241449A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2021241449A13</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGRoZGJoYmJpaOhsbEqQIA-6YflA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>MAEDA Tatsurou ; HORITA Hideki ; TAKAHASHI Masahiro</creator><creatorcontrib>MAEDA Tatsurou ; HORITA Hideki ; TAKAHASHI Masahiro</creatorcontrib><description>This semiconductor device comprises: an insulating film provided on a substrate; a chlorine-containing semiconductor layer provided adjacent to the insulating film; and a semiconductor region provided adjacent to the chlorine-containing semiconductor layer. The chlorine concentration of the chlorine-containing semiconductor layer is 1.0×1020 atoms/cm3 to 1.0×1022 atoms/cm3, inclusive.
L'invention concerne un dispositif semi-conducteur comprenant : un film isolant disposé sur un substrat ; une couche semi-conductrice contenant du chlore, disposée adjacente au film isolant ; et une zone semi-conductrice disposée adjacente à la couche semi-conductrice contenant du chlore. La concentration de chlore de la couche semi-conductrice contenant du chlore est comprise entre 1,0×1020 atomes/cm3 et 1,0×1022 atomes/cm3, compris.
基板上に設けられた絶縁膜と、絶縁膜に隣接して設けられた塩素含有半導体層と、塩素含有半導体層に隣接して設けられた半導体領域と、を有し、塩素含有半導体層の塩素濃度が１．０×１０２０ａｔｏｍｓ／ｃｍ３以上１．０×１０２２ａｔｏｍｓ／ｃｍ３以下である半導体デバイス。</description><language>eng ; fre ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211202&DB=EPODOC&CC=WO&NR=2021241449A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211202&DB=EPODOC&CC=WO&NR=2021241449A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MAEDA Tatsurou</creatorcontrib><creatorcontrib>HORITA Hideki</creatorcontrib><creatorcontrib>TAKAHASHI Masahiro</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>This semiconductor device comprises: an insulating film provided on a substrate; a chlorine-containing semiconductor layer provided adjacent to the insulating film; and a semiconductor region provided adjacent to the chlorine-containing semiconductor layer. The chlorine concentration of the chlorine-containing semiconductor layer is 1.0×1020 atoms/cm3 to 1.0×1022 atoms/cm3, inclusive.
L'invention concerne un dispositif semi-conducteur comprenant : un film isolant disposé sur un substrat ; une couche semi-conductrice contenant du chlore, disposée adjacente au film isolant ; et une zone semi-conductrice disposée adjacente à la couche semi-conductrice contenant du chlore. La concentration de chlore de la couche semi-conductrice contenant du chlore est comprise entre 1,0×1020 atomes/cm3 et 1,0×1022 atomes/cm3, compris.
基板上に設けられた絶縁膜と、絶縁膜に隣接して設けられた塩素含有半導体層と、塩素含有半導体層に隣接して設けられた半導体領域と、を有し、塩素含有半導体層の塩素濃度が１．０×１０２０ａｔｏｍｓ／ｃｍ３以上１．０×１０２２ａｔｏｍｓ／ｃｍ３以下である半導体デバイス。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGRoZGJoYmJpaOhsbEqQIA-6YflA</recordid><startdate>20211202</startdate><enddate>20211202</enddate><creator>MAEDA Tatsurou</creator><creator>HORITA Hideki</creator><creator>TAKAHASHI Masahiro</creator><scope>EVB</scope></search><sort><creationdate>20211202</creationdate><title>SEMICONDUCTOR DEVICE</title><author>MAEDA Tatsurou ; HORITA Hideki ; TAKAHASHI Masahiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021241449A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MAEDA Tatsurou</creatorcontrib><creatorcontrib>HORITA Hideki</creatorcontrib><creatorcontrib>TAKAHASHI Masahiro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MAEDA Tatsurou</au><au>HORITA Hideki</au><au>TAKAHASHI Masahiro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2021-12-02</date><risdate>2021</risdate><abstract>This semiconductor device comprises: an insulating film provided on a substrate; a chlorine-containing semiconductor layer provided adjacent to the insulating film; and a semiconductor region provided adjacent to the chlorine-containing semiconductor layer. The chlorine concentration of the chlorine-containing semiconductor layer is 1.0×1020 atoms/cm3 to 1.0×1022 atoms/cm3, inclusive.
L'invention concerne un dispositif semi-conducteur comprenant : un film isolant disposé sur un substrat ; une couche semi-conductrice contenant du chlore, disposée adjacente au film isolant ; et une zone semi-conductrice disposée adjacente à la couche semi-conductrice contenant du chlore. La concentration de chlore de la couche semi-conductrice contenant du chlore est comprise entre 1,0×1020 atomes/cm3 et 1,0×1022 atomes/cm3, compris.
基板上に設けられた絶縁膜と、絶縁膜に隣接して設けられた塩素含有半導体層と、塩素含有半導体層に隣接して設けられた半導体領域と、を有し、塩素含有半導体層の塩素濃度が１．０×１０２０ａｔｏｍｓ／ｃｍ３以上１．０×１０２２ａｔｏｍｓ／ｃｍ３以下である半導体デバイス。</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; jpn |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SEMICONDUCTOR DEVICE |
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