GROUP III NITRIDE-BASED TRANSISTOR DEVICE
A Group III nitride-based transistor device is provided that has a gate drain capacitance (CGD), a drain source capacitance (CDS) and a drain source on resistance (RDSon). A ratio of the gate drain capacitance (CGD) at a drain source voltage (VDS) of 0V, CGD (0V), and the gate drain capacitance CGD...
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| creator | TWYNAM, John BRECH, Helmut |
| description | A Group III nitride-based transistor device is provided that has a gate drain capacitance (CGD), a drain source capacitance (CDS) and a drain source on resistance (RDSon). A ratio of the gate drain capacitance (CGD) at a drain source voltage (VDS) of 0V, CGD (0V), and the gate drain capacitance CGD at a value of VDS > 0V, CGDV, is at least 3:1, wherein VDS is less than 15V.
L'invention concerne un dispositif de transistor à base de nitrure du groupe III qui a une capacité de drain de grille (CGD), une capacité de source de drain (CDS) et une source de drain sur résistance (RDSon). Un rapport de la capacité de drain de grille (CGD) à une tension de source de drain (VDS) de 0 V, CGD (0 V), et de la capacité de drain de grille CGD à une valeur de VDS > 0 V, CGDV, est d'au moins 3 : 1, VDS étant inférieur à 15 V. |
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L'invention concerne un dispositif de transistor à base de nitrure du groupe III qui a une capacité de drain de grille (CGD), une capacité de source de drain (CDS) et une source de drain sur résistance (RDSon). Un rapport de la capacité de drain de grille (CGD) à une tension de source de drain (VDS) de 0 V, CGD (0 V), et de la capacité de drain de grille CGD à une valeur de VDS > 0 V, CGDV, est d'au moins 3 : 1, VDS étant inférieur à 15 V.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211104&DB=EPODOC&CC=WO&NR=2021219740A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211104&DB=EPODOC&CC=WO&NR=2021219740A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TWYNAM, John</creatorcontrib><creatorcontrib>BRECH, Helmut</creatorcontrib><title>GROUP III NITRIDE-BASED TRANSISTOR DEVICE</title><description>A Group III nitride-based transistor device is provided that has a gate drain capacitance (CGD), a drain source capacitance (CDS) and a drain source on resistance (RDSon). A ratio of the gate drain capacitance (CGD) at a drain source voltage (VDS) of 0V, CGD (0V), and the gate drain capacitance CGD at a value of VDS > 0V, CGDV, is at least 3:1, wherein VDS is less than 15V.
L'invention concerne un dispositif de transistor à base de nitrure du groupe III qui a une capacité de drain de grille (CGD), une capacité de source de drain (CDS) et une source de drain sur résistance (RDSon). Un rapport de la capacité de drain de grille (CGD) à une tension de source de drain (VDS) de 0 V, CGD (0 V), et de la capacité de drain de grille CGD à une valeur de VDS > 0 V, CGDV, est d'au moins 3 : 1, VDS étant inférieur à 15 V.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB0D_IPDVDw9PRU8PMMCfJ0cdV1cgx2dVEICXL0C_YMDvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGRoZGhpbmJgaOhsbEqQIAvWslRA</recordid><startdate>20211104</startdate><enddate>20211104</enddate><creator>TWYNAM, John</creator><creator>BRECH, Helmut</creator><scope>EVB</scope></search><sort><creationdate>20211104</creationdate><title>GROUP III NITRIDE-BASED TRANSISTOR DEVICE</title><author>TWYNAM, John ; BRECH, Helmut</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021219740A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TWYNAM, John</creatorcontrib><creatorcontrib>BRECH, Helmut</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TWYNAM, John</au><au>BRECH, Helmut</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GROUP III NITRIDE-BASED TRANSISTOR DEVICE</title><date>2021-11-04</date><risdate>2021</risdate><abstract>A Group III nitride-based transistor device is provided that has a gate drain capacitance (CGD), a drain source capacitance (CDS) and a drain source on resistance (RDSon). A ratio of the gate drain capacitance (CGD) at a drain source voltage (VDS) of 0V, CGD (0V), and the gate drain capacitance CGD at a value of VDS > 0V, CGDV, is at least 3:1, wherein VDS is less than 15V.
L'invention concerne un dispositif de transistor à base de nitrure du groupe III qui a une capacité de drain de grille (CGD), une capacité de source de drain (CDS) et une source de drain sur résistance (RDSon). Un rapport de la capacité de drain de grille (CGD) à une tension de source de drain (VDS) de 0 V, CGD (0 V), et de la capacité de drain de grille CGD à une valeur de VDS > 0 V, CGDV, est d'au moins 3 : 1, VDS étant inférieur à 15 V.</abstract><oa>free_for_read</oa></addata></record> |
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| title | GROUP III NITRIDE-BASED TRANSISTOR DEVICE |
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