SEMICONDUCTOR MANUFACTURING METHOD AND MULTI-PIECE DEPOSITION DEVICE
Provided are a semiconductor manufacturing method and a multi-piece deposition device. The semiconductor manufacturing method comprises: performing a first deposition process on a substrate (110) of a multi-piece deposition device (100); taking out the substrate (110) after the first deposition proc...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | chi ; eng ; fre |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | DUAN, Xiankun REN, Ruochen TSENG, Hsiang-Tung |
| description | Provided are a semiconductor manufacturing method and a multi-piece deposition device. The semiconductor manufacturing method comprises: performing a first deposition process on a substrate (110) of a multi-piece deposition device (100); taking out the substrate (110) after the first deposition process is completed; introducing auxiliary gas into the multi-piece deposition device (100), and forming plasma using the auxiliary gas; placing the substrate (110) to be subjected to deposition in the multi-piece deposition device (100); and performing a second deposition process on the substrate (110) in the multi-piece deposition device (100). The auxiliary gas is introduced within a time interval of waiting time of the deposition processes, and is converted into the plasma, such that the number of residual charges in the multi-piece deposition device (100) is increased; and when the second deposition process is started, the number of residual charges in the multi-piece deposition device (100) is relatively great, |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2021208680A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2021208680A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2021208680A13</originalsourceid><addsrcrecordid>eNrjZHAJdvX1dPb3cwl1DvEPUvB19At1c3QOCQ3y9HNX8HUN8fB3UXD0c1HwDfUJ8dQN8HR1dlVwcQ3wD_YM8fT3AzLDPJ1deRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfLi_kYGRoZGBhZmFgaOhMXGqAC1RLOg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR MANUFACTURING METHOD AND MULTI-PIECE DEPOSITION DEVICE</title><source>esp@cenet</source><creator>DUAN, Xiankun ; REN, Ruochen ; TSENG, Hsiang-Tung</creator><creatorcontrib>DUAN, Xiankun ; REN, Ruochen ; TSENG, Hsiang-Tung</creatorcontrib><description>Provided are a semiconductor manufacturing method and a multi-piece deposition device. The semiconductor manufacturing method comprises: performing a first deposition process on a substrate (110) of a multi-piece deposition device (100); taking out the substrate (110) after the first deposition process is completed; introducing auxiliary gas into the multi-piece deposition device (100), and forming plasma using the auxiliary gas; placing the substrate (110) to be subjected to deposition in the multi-piece deposition device (100); and performing a second deposition process on the substrate (110) in the multi-piece deposition device (100). The auxiliary gas is introduced within a time interval of waiting time of the deposition processes, and is converted into the plasma, such that the number of residual charges in the multi-piece deposition device (100) is increased; and when the second deposition process is started, the number of residual charges in the multi-piece deposition device (100) is relatively great,</description><language>chi ; eng ; fre</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211021&DB=EPODOC&CC=WO&NR=2021208680A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20211021&DB=EPODOC&CC=WO&NR=2021208680A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DUAN, Xiankun</creatorcontrib><creatorcontrib>REN, Ruochen</creatorcontrib><creatorcontrib>TSENG, Hsiang-Tung</creatorcontrib><title>SEMICONDUCTOR MANUFACTURING METHOD AND MULTI-PIECE DEPOSITION DEVICE</title><description>Provided are a semiconductor manufacturing method and a multi-piece deposition device. The semiconductor manufacturing method comprises: performing a first deposition process on a substrate (110) of a multi-piece deposition device (100); taking out the substrate (110) after the first deposition process is completed; introducing auxiliary gas into the multi-piece deposition device (100), and forming plasma using the auxiliary gas; placing the substrate (110) to be subjected to deposition in the multi-piece deposition device (100); and performing a second deposition process on the substrate (110) in the multi-piece deposition device (100). The auxiliary gas is introduced within a time interval of waiting time of the deposition processes, and is converted into the plasma, such that the number of residual charges in the multi-piece deposition device (100) is increased; and when the second deposition process is started, the number of residual charges in the multi-piece deposition device (100) is relatively great,</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHAJdvX1dPb3cwl1DvEPUvB19At1c3QOCQ3y9HNX8HUN8fB3UXD0c1HwDfUJ8dQN8HR1dlVwcQ3wD_YM8fT3AzLDPJ1deRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfLi_kYGRoZGBhZmFgaOhMXGqAC1RLOg</recordid><startdate>20211021</startdate><enddate>20211021</enddate><creator>DUAN, Xiankun</creator><creator>REN, Ruochen</creator><creator>TSENG, Hsiang-Tung</creator><scope>EVB</scope></search><sort><creationdate>20211021</creationdate><title>SEMICONDUCTOR MANUFACTURING METHOD AND MULTI-PIECE DEPOSITION DEVICE</title><author>DUAN, Xiankun ; REN, Ruochen ; TSENG, Hsiang-Tung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021208680A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng ; fre</language><creationdate>2021</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DUAN, Xiankun</creatorcontrib><creatorcontrib>REN, Ruochen</creatorcontrib><creatorcontrib>TSENG, Hsiang-Tung</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DUAN, Xiankun</au><au>REN, Ruochen</au><au>TSENG, Hsiang-Tung</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR MANUFACTURING METHOD AND MULTI-PIECE DEPOSITION DEVICE</title><date>2021-10-21</date><risdate>2021</risdate><abstract>Provided are a semiconductor manufacturing method and a multi-piece deposition device. The semiconductor manufacturing method comprises: performing a first deposition process on a substrate (110) of a multi-piece deposition device (100); taking out the substrate (110) after the first deposition process is completed; introducing auxiliary gas into the multi-piece deposition device (100), and forming plasma using the auxiliary gas; placing the substrate (110) to be subjected to deposition in the multi-piece deposition device (100); and performing a second deposition process on the substrate (110) in the multi-piece deposition device (100). The auxiliary gas is introduced within a time interval of waiting time of the deposition processes, and is converted into the plasma, such that the number of residual charges in the multi-piece deposition device (100) is increased; and when the second deposition process is started, the number of residual charges in the multi-piece deposition device (100) is relatively great,</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | chi ; eng ; fre |
| recordid | cdi_epo_espacenet_WO2021208680A1 |
| source | esp@cenet |
| subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SEMICONDUCTOR MANUFACTURING METHOD AND MULTI-PIECE DEPOSITION DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T19%3A51%3A06IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=DUAN,%20Xiankun&rft.date=2021-10-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO2021208680A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |