SEMICONDUCTOR MANUFACTURING METHOD AND MULTI-PIECE DEPOSITION DEVICE

Provided are a semiconductor manufacturing method and a multi-piece deposition device. The semiconductor manufacturing method comprises: performing a first deposition process on a substrate (110) of a multi-piece deposition device (100); taking out the substrate (110) after the first deposition process is completed; introducing auxiliary gas into the multi-piece deposition device (100), and forming plasma using the auxiliary gas; placing the substrate (110) to be subjected to deposition in the multi-piece deposition device (100); and performing a second deposition process on the substrate (110) in the multi-piece deposition device (100). The auxiliary gas is introduced within a time interval of waiting time of the deposition processes, and is converted into the plasma, such that the number of residual charges in the multi-piece deposition device (100) is increased; and when the second deposition process is started, the number of residual charges in the multi-piece deposition device (100) is relatively great,