RUTHENIUM-CONTAINING FILMS DEPOSITED ON RUTHENIUM-TITANIUM NITRIDE FILMS AND METHODS OF FORMING THE SAME
Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium- containing film on at least a portion of the firs...
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| creator | WOODRUFF, Jacob LIU, Guo |
| description | Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium- containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.
Sont ici décrits des procédés de formation de films contenant du ruthénium par dépôt de couches atomiques et/ou dépôt chimique en phase vapeur. Les procédés comprennent une première étape de formation d'un premier film sur une surface du substrat et une seconde étape de formation du film contenant du ruthénium sur au moins une partie du premier film. La première étape comprend la distribution d'un précurseur de titane et d'un premier co-réactif contenant de l'azote sur le substrat et la distribution d'un premier précurseur de ruthénium et d'un deuxième co-réactif contenant de l'azote sur le substrat pour former le premier film. La seconde étape comprend la distribution d'un second précurseur de ruthénium et d'un troisième co-réactif sur le substrat. Sont également décrits des films contenant du ruthénium. |
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Sont ici décrits des procédés de formation de films contenant du ruthénium par dépôt de couches atomiques et/ou dépôt chimique en phase vapeur. Les procédés comprennent une première étape de formation d'un premier film sur une surface du substrat et une seconde étape de formation du film contenant du ruthénium sur au moins une partie du premier film. La première étape comprend la distribution d'un précurseur de titane et d'un premier co-réactif contenant de l'azote sur le substrat et la distribution d'un premier précurseur de ruthénium et d'un deuxième co-réactif contenant de l'azote sur le substrat pour former le premier film. La seconde étape comprend la distribution d'un second précurseur de ruthénium et d'un troisième co-réactif sur le substrat. Sont également décrits des films contenant du ruthénium.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210722&DB=EPODOC&CC=WO&NR=2021144334A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210722&DB=EPODOC&CC=WO&NR=2021144334A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>WOODRUFF, Jacob</creatorcontrib><creatorcontrib>LIU, Guo</creatorcontrib><title>RUTHENIUM-CONTAINING FILMS DEPOSITED ON RUTHENIUM-TITANIUM NITRIDE FILMS AND METHODS OF FORMING THE SAME</title><description>Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium- containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.
Sont ici décrits des procédés de formation de films contenant du ruthénium par dépôt de couches atomiques et/ou dépôt chimique en phase vapeur. Les procédés comprennent une première étape de formation d'un premier film sur une surface du substrat et une seconde étape de formation du film contenant du ruthénium sur au moins une partie du premier film. La première étape comprend la distribution d'un précurseur de titane et d'un premier co-réactif contenant de l'azote sur le substrat et la distribution d'un premier précurseur de ruthénium et d'un deuxième co-réactif contenant de l'azote sur le substrat pour former le premier film. La seconde étape comprend la distribution d'un second précurseur de ruthénium et d'un troisième co-réactif sur le substrat. Sont également décrits des films contenant du ruthénium.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNzLEKwkAQBNA0FqL-w4J1wEvyA0duzyx4u5LbYBmCnFiIBuL_o4GArdVM8WbW2b3ttEGmLuS1sFpi4iN4OoUIDs8SSdGBMPycktq5AJO25HDRlh0E1EZcBPHgpQ3z1XcF0QbcZqvb8JjSbslNtveodZOn8dWnaRyu6Zne_UWKQ2FMVZVlZU35n_oAM342uA</recordid><startdate>20210722</startdate><enddate>20210722</enddate><creator>WOODRUFF, Jacob</creator><creator>LIU, Guo</creator><scope>EVB</scope></search><sort><creationdate>20210722</creationdate><title>RUTHENIUM-CONTAINING FILMS DEPOSITED ON RUTHENIUM-TITANIUM NITRIDE FILMS AND METHODS OF FORMING THE SAME</title><author>WOODRUFF, Jacob ; LIU, Guo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021144334A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>WOODRUFF, Jacob</creatorcontrib><creatorcontrib>LIU, Guo</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>WOODRUFF, Jacob</au><au>LIU, Guo</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>RUTHENIUM-CONTAINING FILMS DEPOSITED ON RUTHENIUM-TITANIUM NITRIDE FILMS AND METHODS OF FORMING THE SAME</title><date>2021-07-22</date><risdate>2021</risdate><abstract>Methods of forming ruthenium-containing films by atomic layer deposition and/or chemical vapor deposition are provided. The methods include a first step of forming a first film on a surface of the substrate and a second step of forming the ruthenium- containing film on at least a portion of the first film. The first step includes delivering a titanium precursor and a first nitrogen-containing co-reactant to the substrate and delivering a first ruthenium precursor and a second nitrogen-containing co-reactant to the substrate to form the first film. The second step includes delivering a second ruthenium precursor and a third co-reactant to the substrate. Ruthenium-containing films are also provided.
Sont ici décrits des procédés de formation de films contenant du ruthénium par dépôt de couches atomiques et/ou dépôt chimique en phase vapeur. Les procédés comprennent une première étape de formation d'un premier film sur une surface du substrat et une seconde étape de formation du film contenant du ruthénium sur au moins une partie du premier film. La première étape comprend la distribution d'un précurseur de titane et d'un premier co-réactif contenant de l'azote sur le substrat et la distribution d'un premier précurseur de ruthénium et d'un deuxième co-réactif contenant de l'azote sur le substrat pour former le premier film. La seconde étape comprend la distribution d'un second précurseur de ruthénium et d'un troisième co-réactif sur le substrat. Sont également décrits des films contenant du ruthénium.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | RUTHENIUM-CONTAINING FILMS DEPOSITED ON RUTHENIUM-TITANIUM NITRIDE FILMS AND METHODS OF FORMING THE SAME |
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