METHODS TO GROW LOW RESISTIVITY METAL CONTAINING FILMS
The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially...
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| creator | JAIN, Pratham SALY, Mark KALUTARAGE, Lakmal C ANTHIS, Jeffrey W THOMPSON, David WU, Liqi CHANG, Mei |
| description | The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.
L'invention concerne l'utilisation d'un agent réducteur à 1,4-diène cyclique conjointement avec un précurseur de métal et un réactif pour former des films contenant un métal. Des procédés de formation du film contenant un métal consistent en l'exposition d'une surface de substrat à un précurseur de métal, un agent réducteur et un réactif soit simultanément, soit partiellement simultanément, soit séparément et séquentiellement pour former le film contenant un métal. |
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L'invention concerne l'utilisation d'un agent réducteur à 1,4-diène cyclique conjointement avec un précurseur de métal et un réactif pour former des films contenant un métal. Des procédés de formation du film contenant un métal consistent en l'exposition d'une surface de substrat à un précurseur de métal, un agent réducteur et un réactif soit simultanément, soit partiellement simultanément, soit séparément et séquentiellement pour former le film contenant un métal.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210506&DB=EPODOC&CC=WO&NR=2021087069A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210506&DB=EPODOC&CC=WO&NR=2021087069A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JAIN, Pratham</creatorcontrib><creatorcontrib>SALY, Mark</creatorcontrib><creatorcontrib>KALUTARAGE, Lakmal C</creatorcontrib><creatorcontrib>ANTHIS, Jeffrey W</creatorcontrib><creatorcontrib>THOMPSON, David</creatorcontrib><creatorcontrib>WU, Liqi</creatorcontrib><creatorcontrib>CHANG, Mei</creatorcontrib><title>METHODS TO GROW LOW RESISTIVITY METAL CONTAINING FILMS</title><description>The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.
L'invention concerne l'utilisation d'un agent réducteur à 1,4-diène cyclique conjointement avec un précurseur de métal et un réactif pour former des films contenant un métal. Des procédés de formation du film contenant un métal consistent en l'exposition d'une surface de substrat à un précurseur de métal, un agent réducteur et un réactif soit simultanément, soit partiellement simultanément, soit séparément et séquentiellement pour former le film contenant un métal.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDDzdQ3x8HcJVgjxV3AP8g9X8AHiINdgz-AQzzDPkEgFoLyjj4Kzv1-Io6efp5-7gpunj28wDwNrWmJOcSovlOZmUHZzDXH20E0tyI9PLS5ITE7NSy2JD_c3MjAyNLAwNzCzdDQ0Jk4VANRxKSI</recordid><startdate>20210506</startdate><enddate>20210506</enddate><creator>JAIN, Pratham</creator><creator>SALY, Mark</creator><creator>KALUTARAGE, Lakmal C</creator><creator>ANTHIS, Jeffrey W</creator><creator>THOMPSON, David</creator><creator>WU, Liqi</creator><creator>CHANG, Mei</creator><scope>EVB</scope></search><sort><creationdate>20210506</creationdate><title>METHODS TO GROW LOW RESISTIVITY METAL CONTAINING FILMS</title><author>JAIN, Pratham ; SALY, Mark ; KALUTARAGE, Lakmal C ; ANTHIS, Jeffrey W ; THOMPSON, David ; WU, Liqi ; CHANG, Mei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021087069A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>JAIN, Pratham</creatorcontrib><creatorcontrib>SALY, Mark</creatorcontrib><creatorcontrib>KALUTARAGE, Lakmal C</creatorcontrib><creatorcontrib>ANTHIS, Jeffrey W</creatorcontrib><creatorcontrib>THOMPSON, David</creatorcontrib><creatorcontrib>WU, Liqi</creatorcontrib><creatorcontrib>CHANG, Mei</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JAIN, Pratham</au><au>SALY, Mark</au><au>KALUTARAGE, Lakmal C</au><au>ANTHIS, Jeffrey W</au><au>THOMPSON, David</au><au>WU, Liqi</au><au>CHANG, Mei</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHODS TO GROW LOW RESISTIVITY METAL CONTAINING FILMS</title><date>2021-05-06</date><risdate>2021</risdate><abstract>The use of a cyclic 1,4-diene reducing agent with a metal precursor and a reactant to form metal-containing films are described. Methods of forming the metal-containing film comprises exposing a substrate surface to a metal precursor, a reducing agent and a reactant either simultaneously, partially simultaneously or separately and sequentially to form the metal-containing film.
L'invention concerne l'utilisation d'un agent réducteur à 1,4-diène cyclique conjointement avec un précurseur de métal et un réactif pour former des films contenant un métal. Des procédés de formation du film contenant un métal consistent en l'exposition d'une surface de substrat à un précurseur de métal, un agent réducteur et un réactif soit simultanément, soit partiellement simultanément, soit séparément et séquentiellement pour former le film contenant un métal.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHODS TO GROW LOW RESISTIVITY METAL CONTAINING FILMS |
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