FILM-FORMING METHOD AND FILM-FORMING APPARATUS

The present invention comprises: installing, inside a film-forming chamber (2a), at least a vapor deposition material and substrates (S); supplying a gas that does not change the composition of exhaust gas and/or the vapor deposition material to establish, for a first region (A) that includes the su...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MUROTANI, Hiroshi, OHTAKI, Yoshiyuki, MIYAUCHI, Mitsuhiro, HASEGAWA, Tomokazu, MATSUDAIRA, Takayuki
Format: Patent
Sprache:eng ; fre ; jpn
Schlagworte:
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