METHOD, SYSTEM AND APPARATUS FOR GROWING HOLLOW CORE SILICON SINGLE CRYSTALS

A method of growing a substantially dislocation-free hollowed core silicon crystal is disclosed, the method including providing a substantially circular silicon seed, the seed including a top surface, a bottom surface, an outer surface and a notch within the outer surface; securing the seed into a c...

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Bibliographische Detailangaben
Hauptverfasser:	NANDAN, Rituraj, DEHKORDI, Arash Mehdizadeh
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	A method of growing a substantially dislocation-free hollowed core silicon crystal is disclosed, the method including providing a substantially circular silicon seed, the seed including a top surface, a bottom surface, an outer surface and a notch within the outer surface; securing the seed into a chuck by inserting a retainer piece into the notch on the outer surface of the silicon seed; lowering the silicon seed into molten silicon within a crucible; gradually withdrawing the silicon seed from the molten silicon to form a substantially dislocation-free hollowed core silicon crystal. Silicon crystal seeds are also disclosed, as are systems and apparatus for forming hollow silicon crystals. L'invention concerne un procédé de croissance d'un cristal de silicium à noyau creusé pratiquement sans dislocation, le procédé consistant à fournir un germe de silicium sensiblement circulaire, le germe comprenant une surface supérieure, une surface inférieure, une surface externe et une encoche dans la surface externe ; fixer le germe dans un dispositif de contention par insertion d'une pièce de retenue dans l'encoche sur la surface externe du germe de silicium ; abaisser le germe de silicium dans le silicium fondu dans un creuset ; retirer progressivement le germe de silicium du silicium fondu pour former un cristal de silicium à noyau creux pratiquement sans dislocation. L'invention concerne également des germes cristallins de silicium, ainsi que des systèmes et un appareil pour former des cristaux de silicium creux.