SUPPORT BRACKET APPARATUS AND METHODS FOR SUBSTRATE PROCESSING
Aspects of the present disclosure relate to a support bracket apparatus and methods for substrate processing, such as plasma processing chambers. In one implementation a substrate processing chamber includes a chamber body. The chamber body includes one or more sidewalls, and each of the one or more...
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| creator | ANWAR, Suhail FURUTA, Gaku SHINDE, Ranjit Indrajit |
| description | Aspects of the present disclosure relate to a support bracket apparatus and methods for substrate processing, such as plasma processing chambers. In one implementation a substrate processing chamber includes a chamber body. The chamber body includes one or more sidewalls, and each of the one or more sidewalls includes an inner surface. The substrate processing chamber also includes a pedestal having a support surface, a processing volume above the pedestal, and a lower volume below the pedestal. The substrate processing chamber also includes a bracket mounted to the inner surface of a sidewall of the one or more sidewalls. The bracket includes a first end, a second end, and a longitudinal length between the first end and the second end. The bracket also includes a gas opening formed in the bracket between the first end and the second end. The gas opening allows gas to flow through the gas opening.
Certains aspects de la présente invention concernent un appareil de console de support et des procédés de traitement de substrat, par exemple des chambres de traitement au plasma. Selon un mode de réalisation, une chambre de traitement de substrat comprend un corps de chambre. Le corps de chambre comprend une ou plusieurs parois latérales, et chacune des une ou plusieurs parois latérales comprend une surface interne. La chambre de traitement de substrat comprend également un socle ayant une surface de support, un volume de traitement au-dessus du socle, et un volume inférieur au-dessous du socle. La chambre de traitement de substrat comprend également une console montée sur la surface interne d'une paroi latérale des une ou plusieurs parois latérales. La console a une première extrémité, une seconde extrémité et une longueur longitudinale entre la première extrémité et la seconde extrémité. La console comprend également une ouverture de gaz formée dans la console entre la première extrémité et la seconde extrémité. L'ouverture de gaz permet au gaz de s'écouler à travers l'ouverture de gaz. |
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Certains aspects de la présente invention concernent un appareil de console de support et des procédés de traitement de substrat, par exemple des chambres de traitement au plasma. Selon un mode de réalisation, une chambre de traitement de substrat comprend un corps de chambre. Le corps de chambre comprend une ou plusieurs parois latérales, et chacune des une ou plusieurs parois latérales comprend une surface interne. La chambre de traitement de substrat comprend également un socle ayant une surface de support, un volume de traitement au-dessus du socle, et un volume inférieur au-dessous du socle. La chambre de traitement de substrat comprend également une console montée sur la surface interne d'une paroi latérale des une ou plusieurs parois latérales. La console a une première extrémité, une seconde extrémité et une longueur longitudinale entre la première extrémité et la seconde extrémité. La console comprend également une ouverture de gaz formée dans la console entre la première extrémité et la seconde extrémité. L'ouverture de gaz permet au gaz de s'écouler à travers l'ouverture de gaz.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210401&DB=EPODOC&CC=WO&NR=2021061123A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210401&DB=EPODOC&CC=WO&NR=2021061123A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ANWAR, Suhail</creatorcontrib><creatorcontrib>FURUTA, Gaku</creatorcontrib><creatorcontrib>SHINDE, Ranjit Indrajit</creatorcontrib><title>SUPPORT BRACKET APPARATUS AND METHODS FOR SUBSTRATE PROCESSING</title><description>Aspects of the present disclosure relate to a support bracket apparatus and methods for substrate processing, such as plasma processing chambers. In one implementation a substrate processing chamber includes a chamber body. The chamber body includes one or more sidewalls, and each of the one or more sidewalls includes an inner surface. The substrate processing chamber also includes a pedestal having a support surface, a processing volume above the pedestal, and a lower volume below the pedestal. The substrate processing chamber also includes a bracket mounted to the inner surface of a sidewall of the one or more sidewalls. The bracket includes a first end, a second end, and a longitudinal length between the first end and the second end. The bracket also includes a gas opening formed in the bracket between the first end and the second end. The gas opening allows gas to flow through the gas opening.
Certains aspects de la présente invention concernent un appareil de console de support et des procédés de traitement de substrat, par exemple des chambres de traitement au plasma. Selon un mode de réalisation, une chambre de traitement de substrat comprend un corps de chambre. Le corps de chambre comprend une ou plusieurs parois latérales, et chacune des une ou plusieurs parois latérales comprend une surface interne. La chambre de traitement de substrat comprend également un socle ayant une surface de support, un volume de traitement au-dessus du socle, et un volume inférieur au-dessous du socle. La chambre de traitement de substrat comprend également une console montée sur la surface interne d'une paroi latérale des une ou plusieurs parois latérales. La console a une première extrémité, une seconde extrémité et une longueur longitudinale entre la première extrémité et la seconde extrémité. La console comprend également une ouverture de gaz formée dans la console entre la première extrémité et la seconde extrémité. 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In one implementation a substrate processing chamber includes a chamber body. The chamber body includes one or more sidewalls, and each of the one or more sidewalls includes an inner surface. The substrate processing chamber also includes a pedestal having a support surface, a processing volume above the pedestal, and a lower volume below the pedestal. The substrate processing chamber also includes a bracket mounted to the inner surface of a sidewall of the one or more sidewalls. The bracket includes a first end, a second end, and a longitudinal length between the first end and the second end. The bracket also includes a gas opening formed in the bracket between the first end and the second end. The gas opening allows gas to flow through the gas opening.
Certains aspects de la présente invention concernent un appareil de console de support et des procédés de traitement de substrat, par exemple des chambres de traitement au plasma. Selon un mode de réalisation, une chambre de traitement de substrat comprend un corps de chambre. Le corps de chambre comprend une ou plusieurs parois latérales, et chacune des une ou plusieurs parois latérales comprend une surface interne. La chambre de traitement de substrat comprend également un socle ayant une surface de support, un volume de traitement au-dessus du socle, et un volume inférieur au-dessous du socle. La chambre de traitement de substrat comprend également une console montée sur la surface interne d'une paroi latérale des une ou plusieurs parois latérales. La console a une première extrémité, une seconde extrémité et une longueur longitudinale entre la première extrémité et la seconde extrémité. La console comprend également une ouverture de gaz formée dans la console entre la première extrémité et la seconde extrémité. L'ouverture de gaz permet au gaz de s'écouler à travers l'ouverture de gaz.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SUPPORT BRACKET APPARATUS AND METHODS FOR SUBSTRATE PROCESSING |
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