ENHANCEMENT-MODE HIGH ELECTRON MOBILITY TRANSISTORS WITH SMALL FIN ISOLATION FEATURES

An enhancement-mode high-electron-mobility transistor (HEMT) having small fin isolation features and methods of fabrication thereof are disclosed. The method of fabrication involves providing semiconductor layers capable of sustaining a two-dimensional electron sheet to enable electrical current to...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LOGHMANY, Alireza, LAPOINTE, Jean, AL-ALAM, Elias
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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