ULTRA HIGH PURITY CONDITIONS FOR ATOMIC SCALE PROCESSING
An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The inter...
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| creator | RAYNER, JR O'TOOLE, Noel CARLSEN, Daniel |
| description | An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The internal volume of the reactor may contain a fixture assembly (158) to support a substrate (118) wherein the partial pressure of each background impurity within the internal volume may be below 10-6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.
L'invention concerne un appareil de traitement à l'échelle atomique. L'appareil peut comprendre un réacteur (100) et une source de plasma à couplage inductif (10). Le réacteur peut avoir des surfaces internes (154) et externes (152) de telle sorte qu'une partie des surfaces internes définit un volume interne (156) du réacteur. Le volume interne du réacteur peut contenir un ensemble de fixation (158) pour supporter un substrat (118), la pression partielle de chaque impureté d'arrière-plan dans le volume interne pouvant être inférieure à 10-6 Torr pour réduire le rôle desdites impuretés dans les réactions de surface pendant le traitement à l'échelle atomique. |
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L'invention concerne un appareil de traitement à l'échelle atomique. L'appareil peut comprendre un réacteur (100) et une source de plasma à couplage inductif (10). Le réacteur peut avoir des surfaces internes (154) et externes (152) de telle sorte qu'une partie des surfaces internes définit un volume interne (156) du réacteur. Le volume interne du réacteur peut contenir un ensemble de fixation (158) pour supporter un substrat (118), la pression partielle de chaque impureté d'arrière-plan dans le volume interne pouvant être inférieure à 10-6 Torr pour réduire le rôle desdites impuretés dans les réactions de surface pendant le traitement à l'échelle atomique.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2021</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210218&DB=EPODOC&CC=WO&NR=2021030336A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20210218&DB=EPODOC&CC=WO&NR=2021030336A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>RAYNER, JR</creatorcontrib><creatorcontrib>O'TOOLE, Noel</creatorcontrib><creatorcontrib>CARLSEN, Daniel</creatorcontrib><title>ULTRA HIGH PURITY CONDITIONS FOR ATOMIC SCALE PROCESSING</title><description>An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The internal volume of the reactor may contain a fixture assembly (158) to support a substrate (118) wherein the partial pressure of each background impurity within the internal volume may be below 10-6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.
L'invention concerne un appareil de traitement à l'échelle atomique. L'appareil peut comprendre un réacteur (100) et une source de plasma à couplage inductif (10). Le réacteur peut avoir des surfaces internes (154) et externes (152) de telle sorte qu'une partie des surfaces internes définit un volume interne (156) du réacteur. Le volume interne du réacteur peut contenir un ensemble de fixation (158) pour supporter un substrat (118), la pression partielle de chaque impureté d'arrière-plan dans le volume interne pouvant être inférieure à 10-6 Torr pour réduire le rôle desdites impuretés dans les réactions de surface pendant le traitement à l'échelle atomique.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2021</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLAI9QkJclTw8HT3UAgIDfIMiVRw9vdz8Qzx9PcLVnDzD1JwDPH39XRWCHZ29HFVCAjyd3YNDvb0c-dhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGRoYGxgbGxmaOhsbEqQIAE_Apbw</recordid><startdate>20210218</startdate><enddate>20210218</enddate><creator>RAYNER, JR</creator><creator>O'TOOLE, Noel</creator><creator>CARLSEN, Daniel</creator><scope>EVB</scope></search><sort><creationdate>20210218</creationdate><title>ULTRA HIGH PURITY CONDITIONS FOR ATOMIC SCALE PROCESSING</title><author>RAYNER, JR ; O'TOOLE, Noel ; CARLSEN, Daniel</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2021030336A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2021</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>RAYNER, JR</creatorcontrib><creatorcontrib>O'TOOLE, Noel</creatorcontrib><creatorcontrib>CARLSEN, Daniel</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>RAYNER, JR</au><au>O'TOOLE, Noel</au><au>CARLSEN, Daniel</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ULTRA HIGH PURITY CONDITIONS FOR ATOMIC SCALE PROCESSING</title><date>2021-02-18</date><risdate>2021</risdate><abstract>An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The internal volume of the reactor may contain a fixture assembly (158) to support a substrate (118) wherein the partial pressure of each background impurity within the internal volume may be below 10-6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.
L'invention concerne un appareil de traitement à l'échelle atomique. L'appareil peut comprendre un réacteur (100) et une source de plasma à couplage inductif (10). Le réacteur peut avoir des surfaces internes (154) et externes (152) de telle sorte qu'une partie des surfaces internes définit un volume interne (156) du réacteur. Le volume interne du réacteur peut contenir un ensemble de fixation (158) pour supporter un substrat (118), la pression partielle de chaque impureté d'arrière-plan dans le volume interne pouvant être inférieure à 10-6 Torr pour réduire le rôle desdites impuretés dans les réactions de surface pendant le traitement à l'échelle atomique.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | ULTRA HIGH PURITY CONDITIONS FOR ATOMIC SCALE PROCESSING |
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