FILM FORMATION METHOD AND FILM FORMATION DEVICE
This film formation method has: a step for adsorbing a precursor of a film-forming source gas onto the surface of a substrate by irradiating the inside of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bonding of the source gas while supplyin...
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| creator | IFUKU, Ryota AITA, Michitaka ITABASHI, Ken KATOU, Takaaki YAMADA, Kazuki |
| description | This film formation method has: a step for adsorbing a precursor of a film-forming source gas onto the surface of a substrate by irradiating the inside of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bonding of the source gas while supplying the source gas into the processing container in which a substrate on which a film is to be formed is disposed; and a step for forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.
L'invention concerne un procédé de formation de film comprenant : une étape d'adsorption d'un précurseur d'un gaz source de formation de film sur la surface d'un substrat, par soumission de l'intérieur d'un contenant de traitement à un rayonnement avec une lumière ultraviolette qui possède une première longueur d'onde et sépare une liaison prédéterminée du gaz source, tout en fournissant le gaz source dans le contenant de traitement dans lequel est disposé un substrat sur lequel un film doit être formé ; et une étape de formation d'une couche, dans laquelle le précurseur et un gaz de réaction réagissent sur la surface du substrat, par alimentation du gaz de réaction dans le contenant de traitement.
成膜方法は、成膜対象の基板が配置された処理容器内に成膜用の原料ガスを供給しつつ、原料ガスが有する所定の結合を分離する第１波長の紫外線を処理容器内に照射して、基板の表面に原料ガスの前駆体を吸着する工程と、処理容器内に反応ガスを供給して基板の表面に前駆体と反応ガスとが反応した層を形成する工程と、を有する。 |
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L'invention concerne un procédé de formation de film comprenant : une étape d'adsorption d'un précurseur d'un gaz source de formation de film sur la surface d'un substrat, par soumission de l'intérieur d'un contenant de traitement à un rayonnement avec une lumière ultraviolette qui possède une première longueur d'onde et sépare une liaison prédéterminée du gaz source, tout en fournissant le gaz source dans le contenant de traitement dans lequel est disposé un substrat sur lequel un film doit être formé ; et une étape de formation d'une couche, dans laquelle le précurseur et un gaz de réaction réagissent sur la surface du substrat, par alimentation du gaz de réaction dans le contenant de traitement.
成膜方法は、成膜対象の基板が配置された処理容器内に成膜用の原料ガスを供給しつつ、原料ガスが有する所定の結合を分離する第１波長の紫外線を処理容器内に照射して、基板の表面に原料ガスの前駆体を吸着する工程と、処理容器内に反応ガスを供給して基板の表面に前駆体と反応ガスとが反応した層を形成する工程と、を有する。</description><language>eng ; fre ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201022&DB=EPODOC&CC=WO&NR=2020213454A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20201022&DB=EPODOC&CC=WO&NR=2020213454A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>IFUKU, Ryota</creatorcontrib><creatorcontrib>AITA, Michitaka</creatorcontrib><creatorcontrib>ITABASHI, Ken</creatorcontrib><creatorcontrib>KATOU, Takaaki</creatorcontrib><creatorcontrib>YAMADA, Kazuki</creatorcontrib><title>FILM FORMATION METHOD AND FILM FORMATION DEVICE</title><description>This film formation method has: a step for adsorbing a precursor of a film-forming source gas onto the surface of a substrate by irradiating the inside of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bonding of the source gas while supplying the source gas into the processing container in which a substrate on which a film is to be formed is disposed; and a step for forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.
L'invention concerne un procédé de formation de film comprenant : une étape d'adsorption d'un précurseur d'un gaz source de formation de film sur la surface d'un substrat, par soumission de l'intérieur d'un contenant de traitement à un rayonnement avec une lumière ultraviolette qui possède une première longueur d'onde et sépare une liaison prédéterminée du gaz source, tout en fournissant le gaz source dans le contenant de traitement dans lequel est disposé un substrat sur lequel un film doit être formé ; et une étape de formation d'une couche, dans laquelle le précurseur et un gaz de réaction réagissent sur la surface du substrat, par alimentation du gaz de réaction dans le contenant de traitement.
成膜方法は、成膜対象の基板が配置された処理容器内に成膜用の原料ガスを供給しつつ、原料ガスが有する所定の結合を分離する第１波長の紫外線を処理容器内に照射して、基板の表面に原料ガスの前駆体を吸着する工程と、処理容器内に反応ガスを供給して基板の表面に前駆体と反応ガスとが反応した層を形成する工程と、を有する。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB38_TxVXDzD_J1DPH091PwdQ3x8HdRcPRzUUCTcXEN83R25WFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8eH-RgZAaGhsYmriaGhMnCoAhhsmpg</recordid><startdate>20201022</startdate><enddate>20201022</enddate><creator>IFUKU, Ryota</creator><creator>AITA, Michitaka</creator><creator>ITABASHI, Ken</creator><creator>KATOU, Takaaki</creator><creator>YAMADA, Kazuki</creator><scope>EVB</scope></search><sort><creationdate>20201022</creationdate><title>FILM FORMATION METHOD AND FILM FORMATION DEVICE</title><author>IFUKU, Ryota ; AITA, Michitaka ; ITABASHI, Ken ; KATOU, Takaaki ; YAMADA, Kazuki</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2020213454A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2020</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>IFUKU, Ryota</creatorcontrib><creatorcontrib>AITA, Michitaka</creatorcontrib><creatorcontrib>ITABASHI, Ken</creatorcontrib><creatorcontrib>KATOU, Takaaki</creatorcontrib><creatorcontrib>YAMADA, Kazuki</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>IFUKU, Ryota</au><au>AITA, Michitaka</au><au>ITABASHI, Ken</au><au>KATOU, Takaaki</au><au>YAMADA, Kazuki</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FILM FORMATION METHOD AND FILM FORMATION DEVICE</title><date>2020-10-22</date><risdate>2020</risdate><abstract>This film formation method has: a step for adsorbing a precursor of a film-forming source gas onto the surface of a substrate by irradiating the inside of a processing container with ultraviolet light which has a first wavelength and separates a predetermined bonding of the source gas while supplying the source gas into the processing container in which a substrate on which a film is to be formed is disposed; and a step for forming a layer, in which the precursor and a reaction gas react on the surface of the substrate, by supplying the reaction gas into the processing container.
L'invention concerne un procédé de formation de film comprenant : une étape d'adsorption d'un précurseur d'un gaz source de formation de film sur la surface d'un substrat, par soumission de l'intérieur d'un contenant de traitement à un rayonnement avec une lumière ultraviolette qui possède une première longueur d'onde et sépare une liaison prédéterminée du gaz source, tout en fournissant le gaz source dans le contenant de traitement dans lequel est disposé un substrat sur lequel un film doit être formé ; et une étape de formation d'une couche, dans laquelle le précurseur et un gaz de réaction réagissent sur la surface du substrat, par alimentation du gaz de réaction dans le contenant de traitement.
成膜方法は、成膜対象の基板が配置された処理容器内に成膜用の原料ガスを供給しつつ、原料ガスが有する所定の結合を分離する第１波長の紫外線を処理容器内に照射して、基板の表面に原料ガスの前駆体を吸着する工程と、処理容器内に反応ガスを供給して基板の表面に前駆体と反応ガスとが反応した層を形成する工程と、を有する。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | FILM FORMATION METHOD AND FILM FORMATION DEVICE |
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