SOLID STATE IMAGE SENSOR
Provided is a solid state image sensor comprising: a photelectric converter that performs photoelectric conversion in response to incident light; a microlens for focusing the incident light on the photoelectric converter; and a cured film that is formed, on the microlens, from a radiation-sensitive...
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| creator | NARUKO Akito KUDOU Kazunari |
| description | Provided is a solid state image sensor comprising: a photelectric converter that performs photoelectric conversion in response to incident light; a microlens for focusing the incident light on the photoelectric converter; and a cured film that is formed, on the microlens, from a radiation-sensitive composition containing a resin (A) having a silicon atom and an aromatic ring, and a radiation-sensitive compound (B).
L'invention concerne un capteur d'image à semi-conducteurs comprenant : un convertisseur photoélectrique qui effectue une conversion photoélectrique en réponse à une lumière incidente ; une microlentille pour focaliser la lumière incidente sur le convertisseur photoélectrique ; et un film durci qui est formé, sur la microlentille, à partir d'une composition sensible au rayonnement contenant une résine (A), ayant un atome de silicium et un cycle aromatique, et un composé sensible au rayonnement (B).
入射光に応じて光電変換を行う光電変換部と、前記光電変換部に前記入射光を集めるマイクロレンズと、前記マイクロレンズ上の、ケイ素原子および芳香環を含む樹脂（Ａ）と感放射線性化合物（Ｂ）とを含有する感放射線性組成物より形成された硬化膜とを有する固体撮像素子。 |
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L'invention concerne un capteur d'image à semi-conducteurs comprenant : un convertisseur photoélectrique qui effectue une conversion photoélectrique en réponse à une lumière incidente ; une microlentille pour focaliser la lumière incidente sur le convertisseur photoélectrique ; et un film durci qui est formé, sur la microlentille, à partir d'une composition sensible au rayonnement contenant une résine (A), ayant un atome de silicium et un cycle aromatique, et un composé sensible au rayonnement (B).
入射光に応じて光電変換を行う光電変換部と、前記光電変換部に前記入射光を集めるマイクロレンズと、前記マイクロレンズ上の、ケイ素原子および芳香環を含む樹脂（Ａ）と感放射線性化合物（Ｂ）とを含有する感放射線性組成物より形成された硬化膜とを有する固体撮像素子。</description><language>eng ; fre ; jpn</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS ; OPTICS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2020</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200402&DB=EPODOC&CC=WO&NR=2020066127A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20200402&DB=EPODOC&CC=WO&NR=2020066127A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NARUKO Akito</creatorcontrib><creatorcontrib>KUDOU Kazunari</creatorcontrib><title>SOLID STATE IMAGE SENSOR</title><description>Provided is a solid state image sensor comprising: a photelectric converter that performs photoelectric conversion in response to incident light; a microlens for focusing the incident light on the photoelectric converter; and a cured film that is formed, on the microlens, from a radiation-sensitive composition containing a resin (A) having a silicon atom and an aromatic ring, and a radiation-sensitive compound (B).
L'invention concerne un capteur d'image à semi-conducteurs comprenant : un convertisseur photoélectrique qui effectue une conversion photoélectrique en réponse à une lumière incidente ; une microlentille pour focaliser la lumière incidente sur le convertisseur photoélectrique ; et un film durci qui est formé, sur la microlentille, à partir d'une composition sensible au rayonnement contenant une résine (A), ayant un atome de silicium et un cycle aromatique, et un composé sensible au rayonnement (B).
入射光に応じて光電変換を行う光電変換部と、前記光電変換部に前記入射光を集めるマイクロレンズと、前記マイクロレンズ上の、ケイ素原子および芳香環を含む樹脂（Ａ）と感放射線性化合物（Ｂ）とを含有する感放射線性組成物より形成された硬化膜とを有する固体撮像素子。</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</subject><subject>OPTICS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2020</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAI9vfxdFEIDnEMcVXw9HV0d1UIdvUL9g_iYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBkYGBmZmhkbmjobGxKkCAGb1IHw</recordid><startdate>20200402</startdate><enddate>20200402</enddate><creator>NARUKO Akito</creator><creator>KUDOU Kazunari</creator><scope>EVB</scope></search><sort><creationdate>20200402</creationdate><title>SOLID STATE IMAGE SENSOR</title><author>NARUKO Akito ; KUDOU Kazunari</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2020066127A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2020</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS</topic><topic>OPTICS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NARUKO Akito</creatorcontrib><creatorcontrib>KUDOU Kazunari</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NARUKO Akito</au><au>KUDOU Kazunari</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SOLID STATE IMAGE SENSOR</title><date>2020-04-02</date><risdate>2020</risdate><abstract>Provided is a solid state image sensor comprising: a photelectric converter that performs photoelectric conversion in response to incident light; a microlens for focusing the incident light on the photoelectric converter; and a cured film that is formed, on the microlens, from a radiation-sensitive composition containing a resin (A) having a silicon atom and an aromatic ring, and a radiation-sensitive compound (B).
L'invention concerne un capteur d'image à semi-conducteurs comprenant : un convertisseur photoélectrique qui effectue une conversion photoélectrique en réponse à une lumière incidente ; une microlentille pour focaliser la lumière incidente sur le convertisseur photoélectrique ; et un film durci qui est formé, sur la microlentille, à partir d'une composition sensible au rayonnement contenant une résine (A), ayant un atome de silicium et un cycle aromatique, et un composé sensible au rayonnement (B).
入射光に応じて光電変換を行う光電変換部と、前記光電変換部に前記入射光を集めるマイクロレンズと、前記マイクロレンズ上の、ケイ素原子および芳香環を含む樹脂（Ａ）と感放射線性化合物（Ｂ）とを含有する感放射線性組成物より形成された硬化膜とを有する固体撮像素子。</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng ; fre ; jpn |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS OPTICS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES |
| title | SOLID STATE IMAGE SENSOR |
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