GAN HEMT DEVICE AND PREPARATION METHOD

Disclosed in the present application are a GaN HEMT device and a preparation method. The device comprises a substrate, the upper surface of the substrate being sequentially provided with a GaN epitaxial layer and a gate dielectric layer from the bottom up. The device further comprises a gate, a sour...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	FU, Xingchang, LIU, Xiangwu, CUI, Yuxing, ZHOU, Guo, GAO, Yuan, ZHANG, Lijiang, SONG, Jiejing
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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