ULTRAVIOLET LED FLIP CHIP
An ultraviolet light-emitting diode (LED) flip chip, comprising: a substrate (1), and an epitaxial layer structure that is provided on the substrate (1), the epitaxial layer comprising: a buffer and nucleation layer (2), a superlattice structure (3), a heavily doped n-type AlGaN layer (4), a lightly...
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| creator | XIONG, Deping YANG, Sipan WANG, Chengmin HE, Miao |
| description | An ultraviolet light-emitting diode (LED) flip chip, comprising: a substrate (1), and an epitaxial layer structure that is provided on the substrate (1), the epitaxial layer comprising: a buffer and nucleation layer (2), a superlattice structure (3), a heavily doped n-type AlGaN layer (4), a lightly doped n-type AlGaN layer (5), a quantum well active region (6), an electron blocking layer (7), a P-type conductive layer (8), a reflective layer (9), a current expanding layer (10), an insulation layer (11), and a conductive thin film layer (12), which are sequentially provided in a first direction. The first direction is perpendicular to the substrate and is directed from the substrate toward the epitaxial layer. The ultraviolet LED flip chip has the advantages of preventing leakage, having high light-emitting efficiency, having small voltage surge, preventing damage caused by electrostatic discharge, dissipating heat quickly, being highly reliable and so on.
L'invention concerne une puce retournée à diode élect |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | ULTRAVIOLET LED FLIP CHIP |
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