FERROELECTRIC CAPACITOR, FERROELECTRIC FIELD EFFECT TRANSISTOR, AND METHOD USED IN FORMING AN ELECTRONIC DEVICE COMPRISING CONDUCTIVE MATERIAL AND FERROELECTRIC MATERIAL
A method used in forming an electronic device comprising conductive material and ferroelectric material comprises forming a composite stack comprising multiple metal oxide-comprising insulator materials. At least one of the metal oxide-comprising insulator materials is between and directly against n...
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Patent |
| Sprache: | eng ; fre |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | NAHAR, Manuj CHAVAN, Ashonita A |
| description | A method used in forming an electronic device comprising conductive material and ferroelectric material comprises forming a composite stack comprising multiple metal oxide-comprising insulator materials. At least one of the metal oxide-comprising insulator materials is between and directly against non-ferroelectric insulating materials. The multiple metal oxide-comprising insulator materials are of different composition from that of immediately-adjacent of the non-ferroelectric insulating materials. The composite stack is subjected to a temperature of at least 200° C. After the subjecting, the composite stack comprises multiple ferroelectric metal oxide-comprising insulator materials at least one of which is between and directly against non-ferroelectric insulating materials. After the subjecting, the composite stack is ferroelectric. Conductive material is formed and that is adjacent the composite stack. Devices are also disclosed.
La présente invention concerne un procédé utilisé dans la formation d'un dispositif électronique comportant un matériau conducteur et un matériau ferroélectrique qui consiste à former un empilement composite comprenant de multiples matériaux isolants comprenant de l'oxyde métallique. Au moins l'un des matériaux isolants comprenant de l'oxyde métallique se trouve entre et directement contre des matériaux isolants non ferroélectriques. Les multiples matériaux isolants comprenant de l'oxyde métallique sont de composition différente de celle des matériaux isolants non ferroélectriques immédiatement adjacents. L'empilement composite est soumis à une température d'au moins 200 °C. Après la soumission, l'empilement composite comprend de multiples matériaux isolants comprenant de l'oxyde métallique ferroélectriques dont au moins un se trouve entre et directement contre des matériaux isolants non ferroélectriques. Après la soumission, l'empilement composite est ferroélectrique. Un matériau conducteur est formé et est adjacent à l'empilement composite. L'invention concerne également des dispositifs. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2019045927A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2019045927A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2019045927A13</originalsourceid><addsrcrecordid>eNqNjc0KgkAUhd20iOodLrQtUCvC5XDnTl7QmRhHW4rEtIoS7KV6y8xq4a7V4fCdn2nwVGStoYzQWUZAcRTIztgVjIFiyiSQUr0HZ4UuuBhiQkvIyaVGQlmQBNagjM1ZH3oEn77R_YKkipEATX60XLw5Gi1LdFwR5MKRZZENc-PnH5oHk0tz7fziq7NgqchhuvbtvfZd25z9zT_qk4nDKAm3uyTei2jzX-oFBbBIVg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>FERROELECTRIC CAPACITOR, FERROELECTRIC FIELD EFFECT TRANSISTOR, AND METHOD USED IN FORMING AN ELECTRONIC DEVICE COMPRISING CONDUCTIVE MATERIAL AND FERROELECTRIC MATERIAL</title><source>esp@cenet</source><creator>NAHAR, Manuj ; CHAVAN, Ashonita A</creator><creatorcontrib>NAHAR, Manuj ; CHAVAN, Ashonita A</creatorcontrib><description>A method used in forming an electronic device comprising conductive material and ferroelectric material comprises forming a composite stack comprising multiple metal oxide-comprising insulator materials. At least one of the metal oxide-comprising insulator materials is between and directly against non-ferroelectric insulating materials. The multiple metal oxide-comprising insulator materials are of different composition from that of immediately-adjacent of the non-ferroelectric insulating materials. The composite stack is subjected to a temperature of at least 200° C. After the subjecting, the composite stack comprises multiple ferroelectric metal oxide-comprising insulator materials at least one of which is between and directly against non-ferroelectric insulating materials. After the subjecting, the composite stack is ferroelectric. Conductive material is formed and that is adjacent the composite stack. Devices are also disclosed.
La présente invention concerne un procédé utilisé dans la formation d'un dispositif électronique comportant un matériau conducteur et un matériau ferroélectrique qui consiste à former un empilement composite comprenant de multiples matériaux isolants comprenant de l'oxyde métallique. Au moins l'un des matériaux isolants comprenant de l'oxyde métallique se trouve entre et directement contre des matériaux isolants non ferroélectriques. Les multiples matériaux isolants comprenant de l'oxyde métallique sont de composition différente de celle des matériaux isolants non ferroélectriques immédiatement adjacents. L'empilement composite est soumis à une température d'au moins 200 °C. Après la soumission, l'empilement composite comprend de multiples matériaux isolants comprenant de l'oxyde métallique ferroélectriques dont au moins un se trouve entre et directement contre des matériaux isolants non ferroélectriques. Après la soumission, l'empilement composite est ferroélectrique. Un matériau conducteur est formé et est adjacent à l'empilement composite. L'invention concerne également des dispositifs.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2019</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190307&DB=EPODOC&CC=WO&NR=2019045927A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20190307&DB=EPODOC&CC=WO&NR=2019045927A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAHAR, Manuj</creatorcontrib><creatorcontrib>CHAVAN, Ashonita A</creatorcontrib><title>FERROELECTRIC CAPACITOR, FERROELECTRIC FIELD EFFECT TRANSISTOR, AND METHOD USED IN FORMING AN ELECTRONIC DEVICE COMPRISING CONDUCTIVE MATERIAL AND FERROELECTRIC MATERIAL</title><description>A method used in forming an electronic device comprising conductive material and ferroelectric material comprises forming a composite stack comprising multiple metal oxide-comprising insulator materials. At least one of the metal oxide-comprising insulator materials is between and directly against non-ferroelectric insulating materials. The multiple metal oxide-comprising insulator materials are of different composition from that of immediately-adjacent of the non-ferroelectric insulating materials. The composite stack is subjected to a temperature of at least 200° C. After the subjecting, the composite stack comprises multiple ferroelectric metal oxide-comprising insulator materials at least one of which is between and directly against non-ferroelectric insulating materials. After the subjecting, the composite stack is ferroelectric. Conductive material is formed and that is adjacent the composite stack. Devices are also disclosed.
La présente invention concerne un procédé utilisé dans la formation d'un dispositif électronique comportant un matériau conducteur et un matériau ferroélectrique qui consiste à former un empilement composite comprenant de multiples matériaux isolants comprenant de l'oxyde métallique. Au moins l'un des matériaux isolants comprenant de l'oxyde métallique se trouve entre et directement contre des matériaux isolants non ferroélectriques. Les multiples matériaux isolants comprenant de l'oxyde métallique sont de composition différente de celle des matériaux isolants non ferroélectriques immédiatement adjacents. L'empilement composite est soumis à une température d'au moins 200 °C. Après la soumission, l'empilement composite comprend de multiples matériaux isolants comprenant de l'oxyde métallique ferroélectriques dont au moins un se trouve entre et directement contre des matériaux isolants non ferroélectriques. Après la soumission, l'empilement composite est ferroélectrique. Un matériau conducteur est formé et est adjacent à l'empilement composite. L'invention concerne également des dispositifs.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2019</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjc0KgkAUhd20iOodLrQtUCvC5XDnTl7QmRhHW4rEtIoS7KV6y8xq4a7V4fCdn2nwVGStoYzQWUZAcRTIztgVjIFiyiSQUr0HZ4UuuBhiQkvIyaVGQlmQBNagjM1ZH3oEn77R_YKkipEATX60XLw5Gi1LdFwR5MKRZZENc-PnH5oHk0tz7fziq7NgqchhuvbtvfZd25z9zT_qk4nDKAm3uyTei2jzX-oFBbBIVg</recordid><startdate>20190307</startdate><enddate>20190307</enddate><creator>NAHAR, Manuj</creator><creator>CHAVAN, Ashonita A</creator><scope>EVB</scope></search><sort><creationdate>20190307</creationdate><title>FERROELECTRIC CAPACITOR, FERROELECTRIC FIELD EFFECT TRANSISTOR, AND METHOD USED IN FORMING AN ELECTRONIC DEVICE COMPRISING CONDUCTIVE MATERIAL AND FERROELECTRIC MATERIAL</title><author>NAHAR, Manuj ; CHAVAN, Ashonita A</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2019045927A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2019</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAHAR, Manuj</creatorcontrib><creatorcontrib>CHAVAN, Ashonita A</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAHAR, Manuj</au><au>CHAVAN, Ashonita A</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>FERROELECTRIC CAPACITOR, FERROELECTRIC FIELD EFFECT TRANSISTOR, AND METHOD USED IN FORMING AN ELECTRONIC DEVICE COMPRISING CONDUCTIVE MATERIAL AND FERROELECTRIC MATERIAL</title><date>2019-03-07</date><risdate>2019</risdate><abstract>A method used in forming an electronic device comprising conductive material and ferroelectric material comprises forming a composite stack comprising multiple metal oxide-comprising insulator materials. At least one of the metal oxide-comprising insulator materials is between and directly against non-ferroelectric insulating materials. The multiple metal oxide-comprising insulator materials are of different composition from that of immediately-adjacent of the non-ferroelectric insulating materials. The composite stack is subjected to a temperature of at least 200° C. After the subjecting, the composite stack comprises multiple ferroelectric metal oxide-comprising insulator materials at least one of which is between and directly against non-ferroelectric insulating materials. After the subjecting, the composite stack is ferroelectric. Conductive material is formed and that is adjacent the composite stack. Devices are also disclosed.
La présente invention concerne un procédé utilisé dans la formation d'un dispositif électronique comportant un matériau conducteur et un matériau ferroélectrique qui consiste à former un empilement composite comprenant de multiples matériaux isolants comprenant de l'oxyde métallique. Au moins l'un des matériaux isolants comprenant de l'oxyde métallique se trouve entre et directement contre des matériaux isolants non ferroélectriques. Les multiples matériaux isolants comprenant de l'oxyde métallique sont de composition différente de celle des matériaux isolants non ferroélectriques immédiatement adjacents. L'empilement composite est soumis à une température d'au moins 200 °C. Après la soumission, l'empilement composite comprend de multiples matériaux isolants comprenant de l'oxyde métallique ferroélectriques dont au moins un se trouve entre et directement contre des matériaux isolants non ferroélectriques. Après la soumission, l'empilement composite est ferroélectrique. Un matériau conducteur est formé et est adjacent à l'empilement composite. L'invention concerne également des dispositifs.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng ; fre |
| recordid | cdi_epo_espacenet_WO2019045927A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | FERROELECTRIC CAPACITOR, FERROELECTRIC FIELD EFFECT TRANSISTOR, AND METHOD USED IN FORMING AN ELECTRONIC DEVICE COMPRISING CONDUCTIVE MATERIAL AND FERROELECTRIC MATERIAL |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T00%3A35%3A58IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAHAR,%20Manuj&rft.date=2019-03-07&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO2019045927A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |