METHODS FOR METAL OXIDE POST-TREATMENT

Methods comprising forming a metal oxide film by atomic layer deposition using water as an oxidant are described. The metal oxide film is exposed to a decoupled plasma comprising one or more of He, H2 or O2 to lower the wetch etch rate of the metal oxide film. L'invention concerne des procédés...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	SATO, Tatsuya E, LIU, Wei, XIA, Li-Qun
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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