THREE-DIMENSIONAL MEMORY DEVICE HAVING DISCRETE DIRECT SOURCE STRAP CONTACTS AND METHOD OF MAKING THEREOF

A planar material layer stack including a lower etch stop dielectric layer, a sacrificial semiconductor layer, and an upper etch stop dielectric layer is formed over a source semiconductor layer on a substrate. An alternating stack of insulating layers and spacer material layers is formed. The space...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	MATSUMOTO, Kazuyo, HADA, Tsuyoshi, SHIMIZU, Satoshi
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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