METHOD FOR REDUCING THE WET ETCH RATE OF A SIN FILM WITHOUT DAMAGING THE UNDERLYING SUBSTRATE

Methods and apparatuses for forming conformal, low wet etch rate silicon nitride films having low hydrogen content using atomic layer deposition are described herein. Methods involve depositing a silicon nitride film at a first temperature using a bromine-containing and/or iodine containing silicon...

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Bibliographische Detailangaben

Hauptverfasser:	MCKERROW, Andrew John, HAUSMANN, Dennis M
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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