INSULATED GATE BIPOLAR TRANSISTOR AND METHOD FOR MANUFACTURING SUCH AN INSULATED GATE BIPOLAR TRANSISTOR

An insulated gate bipolar is produced, wherein the following steps are performed: (a) providing a lowly n doped substrate (1) having an emitter side (20) and a collector side (27), (b) forming n and p doped layers on the emitter side (20), (c) thinning the substrate (1) on the collector side (27), (...

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Bibliographische Detailangaben

Hauptverfasser:	KOPTA, Arnost, MATTHIAS, Sven, JANISCH, Wolfgang, RAHIMO, Munaf, CORVASCE, Chiara
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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