METHOD OF FORMING A POLYSILICON SIDEWALL OXIDE SPACER IN A MEMORY CELL

Methods of fabricating a memory cell of a semiconductor device, e.g., an EEPROM cell, having a sidewall oxide are disclosed. A memory cell structure is formed including a floating gate (28) and an ONO film (108) over the floating gate. A sidewall oxide (114') is formed on a side surface of the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WONG, Jack, KOPP, Brad, KABEER, Sajid, MURALI, Santosh, HYMAS, Mel
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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