SYSTEM AND METHOD FOR FOCUS DETERMINATION USING FOCUS-SENSITIVE OVERLAY TARGETS
A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection...
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| creator | MIEHER, Walter |
| description | A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.
L'invention concerne un masque de lithographie. Le masque de lithographie comprend au moins un élément de motif segmenté asymétrique. Un élément particulier de motif segmenté asymétrique comprend au moins deux segments, une distance de séparation entre des segments consécutifs étant inférieure à la résolution d'un ensemble d'optique de projection servant à générer une image de l'élément considéré de motif segmenté asymétrique sur un échantillon de telle façon que l'image de l'élément considéré de motif segmenté asymétrique soit une image de motif non segmentée. Une position de l'image de motif non segmentée sur l'échantillon est indicative d'une position de l'échantillon le long d'un axe optique de l'ensemble d'optique de projection. |
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L'invention concerne un masque de lithographie. Le masque de lithographie comprend au moins un élément de motif segmenté asymétrique. Un élément particulier de motif segmenté asymétrique comprend au moins deux segments, une distance de séparation entre des segments consécutifs étant inférieure à la résolution d'un ensemble d'optique de projection servant à générer une image de l'élément considéré de motif segmenté asymétrique sur un échantillon de telle façon que l'image de l'élément considéré de motif segmenté asymétrique soit une image de motif non segmentée. Une position de l'image de motif non segmentée sur l'échantillon est indicative d'une position de l'échantillon le long d'un axe optique de l'ensemble d'optique de projection.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161124&DB=EPODOC&CC=WO&NR=2016187062A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20161124&DB=EPODOC&CC=WO&NR=2016187062A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MIEHER, Walter</creatorcontrib><title>SYSTEM AND METHOD FOR FOCUS DETERMINATION USING FOCUS-SENSITIVE OVERLAY TARGETS</title><description>A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.
L'invention concerne un masque de lithographie. Le masque de lithographie comprend au moins un élément de motif segmenté asymétrique. Un élément particulier de motif segmenté asymétrique comprend au moins deux segments, une distance de séparation entre des segments consécutifs étant inférieure à la résolution d'un ensemble d'optique de projection servant à générer une image de l'élément considéré de motif segmenté asymétrique sur un échantillon de telle façon que l'image de l'élément considéré de motif segmenté asymétrique soit une image de motif non segmentée. Une position de l'image de motif non segmentée sur l'échantillon est indicative d'une position de l'échantillon le long d'un axe optique de l'ensemble d'optique de projection.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZPAPjgwOcfVVcPRzUfB1DfHwd1Fw8w8CYufQYAUX1xDXIF9PP8cQT38_hdBgTz93iIxusKtfsGeIZ5irgn-Ya5CPY6RCiGOQu2tIMA8Da1piTnEqL5TmZlB2cw1x9tBNLciPTy0uSExOzUstiQ_3NzIwNDO0MDcwM3I0NCZOFQAxSTAk</recordid><startdate>20161124</startdate><enddate>20161124</enddate><creator>MIEHER, Walter</creator><scope>EVB</scope></search><sort><creationdate>20161124</creationdate><title>SYSTEM AND METHOD FOR FOCUS DETERMINATION USING FOCUS-SENSITIVE OVERLAY TARGETS</title><author>MIEHER, Walter</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2016187062A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>MIEHER, Walter</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MIEHER, Walter</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SYSTEM AND METHOD FOR FOCUS DETERMINATION USING FOCUS-SENSITIVE OVERLAY TARGETS</title><date>2016-11-24</date><risdate>2016</risdate><abstract>A lithography mask is disclosed. The lithography mask includes at least one asymmetric segmented pattern element. A particular asymmetric segmented pattern element includes at least two segments with a separation distance between consecutive segments smaller than a resolution of a set of projection optics for generating an image of the particular asymmetric segmented pattern element on a sample such that the image of the particular asymmetric segmented pattern element is an unsegmented pattern image. A position of the unsegmented pattern image on the sample is indicative of a location of the sample along an optical axis of the set of projection optics.
L'invention concerne un masque de lithographie. Le masque de lithographie comprend au moins un élément de motif segmenté asymétrique. Un élément particulier de motif segmenté asymétrique comprend au moins deux segments, une distance de séparation entre des segments consécutifs étant inférieure à la résolution d'un ensemble d'optique de projection servant à générer une image de l'élément considéré de motif segmenté asymétrique sur un échantillon de telle façon que l'image de l'élément considéré de motif segmenté asymétrique soit une image de motif non segmentée. Une position de l'image de motif non segmentée sur l'échantillon est indicative d'une position de l'échantillon le long d'un axe optique de l'ensemble d'optique de projection.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SYSTEM AND METHOD FOR FOCUS DETERMINATION USING FOCUS-SENSITIVE OVERLAY TARGETS |
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