METHOD FOR PREPARING NANOSCALE FIELD EFFECT TRANSISTOR
A method for preparing a nanoscale field effect transistor, belonging to the field of large-scale integration circuit manufacturing. The core of the method is the epitaxial growth and preparation of a nanoscale field effect transistor on an SOI substrate, and the material appearance of a channel of...
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| creator | YANG, YUANCHENG XUAN, HAORAN LI, MING FAN, JIEWEN HUANG, RU |
| description | A method for preparing a nanoscale field effect transistor, belonging to the field of large-scale integration circuit manufacturing. The core of the method is the epitaxial growth and preparation of a nanoscale field effect transistor on an SOI substrate, and the material appearance of a channel of a nanoscale device may be accurately controlled via the epitaxial process, further optimising the performance of the device. Additionally, by implementing different channel doping types and doping concentrations, a threshold voltage may be flexibly adjusted so as to adapt to different parasitisms and fluctuations. The method is also compatible with a CMOS back gate process, has a simple procedure and low costs, and may be applied to future large-scale semiconductor device integration.
La présente invention concerne un procédé de préparation d'un transistor à effet de champ à l'échelle nanométrique, appartenant au domaine de la fabrication de circuits à intégration à grande échelle. Le point principal du procédé est |
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La présente invention concerne un procédé de préparation d'un transistor à effet de champ à l'échelle nanométrique, appartenant au domaine de la fabrication de circuits à intégration à grande échelle. Le point principal du procédé est</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | METHOD FOR PREPARING NANOSCALE FIELD EFFECT TRANSISTOR |
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