MEMS STRUCTURE AND ACCELERATION SENSOR

Provided is an MEMS structure wherein detection accuracy is improved by reducing a capacitance change caused by warpage generated in a substrate due to temperature dependency. In a first sensor 21, a weight section 24 and a third fixed electrode 55 that is provided on the substrate 12 face each othe...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	SUZUKI, TOSHIHISA
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT MEASURING MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION,OR SHOCK MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS SEMICONDUCTOR DEVICES TESTING TRANSPORTING
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