SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Provided is a method for manufacturing a semiconductor device with which it is possible to sufficiently improve channel mobility. The surface layer of a silicon carbide base (11) of a wafer (W) is exposed to a halogen atmosphere containing fluorine that was dissociated from silicon tetrafluoride gas...
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| creator | KATOU, TAIKI HOSOI, TAKUJI AZUMO, SHUJI WATANABE, HEIJI SHIMURA, TAKAYOSHI MORISHIMA, MASATO OUCHI, KENJI |
| description | Provided is a method for manufacturing a semiconductor device with which it is possible to sufficiently improve channel mobility. The surface layer of a silicon carbide base (11) of a wafer (W) is exposed to a halogen atmosphere containing fluorine that was dissociated from silicon tetrafluoride gas using plasma, and a gate insulation film (15) is formed on the exposed surface layer.
L'invention concerne un procédé de fabrication d'un dispositif semi-conducteur qui permet d'améliorer suffisamment la mobilité de canal. La couche de surface d'une base de carbure de silicium (11) d'une plaquette (W) est exposée à une atmosphère d'halogène contenant du fluor qui a été dissociée d'un gaz de tétrafluorure de silicium à l'aide d'un plasma, et un film d'isolation de grille (15) est formé sur la couche de surface exposée.
チャネルの移動度を十分に改善することができる半導体デバイスの製造方法を提供する。ウエハＷにおける炭化硅素基部１１の表層を、四フッ化硅素ガスからプラズマによって解離したフッ素を含むハロゲン雰囲気に暴露し、該暴露された表層の上にゲート絶縁膜１５を形成する。 |
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L'invention concerne un procédé de fabrication d'un dispositif semi-conducteur qui permet d'améliorer suffisamment la mobilité de canal. La couche de surface d'une base de carbure de silicium (11) d'une plaquette (W) est exposée à une atmosphère d'halogène contenant du fluor qui a été dissociée d'un gaz de tétrafluorure de silicium à l'aide d'un plasma, et un film d'isolation de grille (15) est formé sur la couche de surface exposée.
チャネルの移動度を十分に改善することができる半導体デバイスの製造方法を提供する。ウエハＷにおける炭化硅素基部１１の表層を、四フッ化硅素ガスからプラズマによって解離したフッ素を含むハロゲン雰囲気に暴露し、該暴露された表層の上にゲート絶縁膜１５を形成する。</description><language>eng ; fre ; jpn</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160107&DB=EPODOC&CC=WO&NR=2016002916A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160107&DB=EPODOC&CC=WO&NR=2016002916A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KATOU, TAIKI</creatorcontrib><creatorcontrib>HOSOI, TAKUJI</creatorcontrib><creatorcontrib>AZUMO, SHUJI</creatorcontrib><creatorcontrib>WATANABE, HEIJI</creatorcontrib><creatorcontrib>SHIMURA, TAKAYOSHI</creatorcontrib><creatorcontrib>MORISHIMA, MASATO</creatorcontrib><creatorcontrib>OUCHI, KENJI</creatorcontrib><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME</title><description>Provided is a method for manufacturing a semiconductor device with which it is possible to sufficiently improve channel mobility. The surface layer of a silicon carbide base (11) of a wafer (W) is exposed to a halogen atmosphere containing fluorine that was dissociated from silicon tetrafluoride gas using plasma, and a gate insulation film (15) is formed on the exposed surface layer.
L'invention concerne un procédé de fabrication d'un dispositif semi-conducteur qui permet d'améliorer suffisamment la mobilité de canal. La couche de surface d'une base de carbure de silicium (11) d'une plaquette (W) est exposée à une atmosphère d'halogène contenant du fluor qui a été dissociée d'un gaz de tétrafluorure de silicium à l'aide d'un plasma, et un film d'isolation de grille (15) est formé sur la couche de surface exposée.
チャネルの移動度を十分に改善することができる半導体デバイスの製造方法を提供する。ウエハＷにおける炭化硅素基部１１の表層を、四フッ化硅素ガスからプラズマによって解離したフッ素を含むハロゲン雰囲気に暴露し、該暴露された表層の上にゲート絶縁膜１５を形成する。</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDALdvX1dPb3cwl1DvEPUnBxDfN0dlVw9HNR8HUN8fB3UXADivo6-oW6OTqHhAZ5-rkrBDv6uvIwsKYl5hSn8kJpbgZlN9cQZw_d1IL8-NTigsTk1LzUkvhwfyMDQzMDAyNLQzNHQ2PiVAEAskgoxw</recordid><startdate>20160107</startdate><enddate>20160107</enddate><creator>KATOU, TAIKI</creator><creator>HOSOI, TAKUJI</creator><creator>AZUMO, SHUJI</creator><creator>WATANABE, HEIJI</creator><creator>SHIMURA, TAKAYOSHI</creator><creator>MORISHIMA, MASATO</creator><creator>OUCHI, KENJI</creator><scope>EVB</scope></search><sort><creationdate>20160107</creationdate><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME</title><author>KATOU, TAIKI ; HOSOI, TAKUJI ; AZUMO, SHUJI ; WATANABE, HEIJI ; SHIMURA, TAKAYOSHI ; MORISHIMA, MASATO ; OUCHI, KENJI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2016002916A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; jpn</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>KATOU, TAIKI</creatorcontrib><creatorcontrib>HOSOI, TAKUJI</creatorcontrib><creatorcontrib>AZUMO, SHUJI</creatorcontrib><creatorcontrib>WATANABE, HEIJI</creatorcontrib><creatorcontrib>SHIMURA, TAKAYOSHI</creatorcontrib><creatorcontrib>MORISHIMA, MASATO</creatorcontrib><creatorcontrib>OUCHI, KENJI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KATOU, TAIKI</au><au>HOSOI, TAKUJI</au><au>AZUMO, SHUJI</au><au>WATANABE, HEIJI</au><au>SHIMURA, TAKAYOSHI</au><au>MORISHIMA, MASATO</au><au>OUCHI, KENJI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME</title><date>2016-01-07</date><risdate>2016</risdate><abstract>Provided is a method for manufacturing a semiconductor device with which it is possible to sufficiently improve channel mobility. The surface layer of a silicon carbide base (11) of a wafer (W) is exposed to a halogen atmosphere containing fluorine that was dissociated from silicon tetrafluoride gas using plasma, and a gate insulation film (15) is formed on the exposed surface layer.
L'invention concerne un procédé de fabrication d'un dispositif semi-conducteur qui permet d'améliorer suffisamment la mobilité de canal. La couche de surface d'une base de carbure de silicium (11) d'une plaquette (W) est exposée à une atmosphère d'halogène contenant du fluor qui a été dissociée d'un gaz de tétrafluorure de silicium à l'aide d'un plasma, et un film d'isolation de grille (15) est formé sur la couche de surface exposée.
チャネルの移動度を十分に改善することができる半導体デバイスの製造方法を提供する。ウエハＷにおける炭化硅素基部１１の表層を、四フッ化硅素ガスからプラズマによって解離したフッ素を含むハロゲン雰囲気に暴露し、該暴露された表層の上にゲート絶縁膜１５を形成する。</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME |
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