THIN FILM DEPOSITION DEVICE
The present invention relates to a thin film deposition device, and the thin film deposition device according to the present invention comprises: a gas supply unit for supplying a plurality of process gases, including a raw material gas and a reaction gas, and a purge gas, the gas supply unit having...
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| creator | HA, JOO-IL LEE, WOO-JIN LEE, DON-HEE SHIN, KI-JO HWANG, SANG-SOO |
| description | The present invention relates to a thin film deposition device, and the thin film deposition device according to the present invention comprises: a gas supply unit for supplying a plurality of process gases, including a raw material gas and a reaction gas, and a purge gas, the gas supply unit having at least one gas supply module for discharging the remaining process gases or the purge gas; and a substrate support unit for supporting a substrate, the substrate support unit being configured to be able to move with regard to the gas supply unit, the thin film deposition device being characterized in that the substrate support unit performs at least one loop movement including a plurality of times of stepwise forward movements and stepwise backward movements, and the loop movement distance between the initial position of the substrate and the final position thereof, when performing the one loop movement, is equal to or larger than the distance of the one gas supply module.
La présente invention concerne un dispositif de dépôt de couche mince, et le dispositif de dépôt de couche mince selon la présente invention comporte : une unité d'alimentation en gaz pour fournir une pluralité de gaz de traitement, comprenant un gaz de matière première et un gaz de réaction, ainsi qu'un gaz de purge, l'unité d'alimentation en gaz ayant au moins un module d'alimentation en gaz pour évacuer les gaz de traitement restants ou le gaz de purge ; une unité de support de substrat pour porter un substrat, l'unité de support de substrat étant configurée pour pouvoir se déplacer par rapport à l'unité d'alimentation en gaz, le dispositif de dépôt de couche mince étant caractérisé en ce que l'unité de support de substrat exécute au moins un mouvement en boucle comprenant une pluralité de répétitions de mouvements progressifs vers l'avant et de mouvements progressifs vers l'arrière, et la distance du mouvement en boucle entre la position initiale du substrat et sa position finale, lors de l'exécution dudit mouvement en boucle, est supérieure ou égale à la distance dudit module d'alimentation en gaz.
본 발명은 박막증착장치에 관한 것으로서, 본 발명에 따른 박막증착장치는 원료가스와 반응가스를 포함하는 복수의 공정가스와 퍼지가스를 공급하고, 잔존하는 상기 공정가스 또는 상기 퍼지가스를 배기하는 가스공급모듈을 적어도 하나 이상 구비한 가스공급부 및 기판을 지지하며 상기 가스공급부에 대해 이동 가능하게 구비되는 기판지지부를 포함하고, 상기 기판지지부는 복수회의 단계별 전진 및 단계별 후진을 포함하는 적어도 하나의 루프이동을 수행하며, 상기 하나의 루프이동을 하는 경우에 상기 기판의 최초위치와 최후위치 사이의 루프이동거리는 상기 하나의 가스공급모듈의 거리 이상인 것을 특징으로 한다. |
| format | Patent |
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La présente invention concerne un dispositif de dépôt de couche mince, et le dispositif de dépôt de couche mince selon la présente invention comporte : une unité d'alimentation en gaz pour fournir une pluralité de gaz de traitement, comprenant un gaz de matière première et un gaz de réaction, ainsi qu'un gaz de purge, l'unité d'alimentation en gaz ayant au moins un module d'alimentation en gaz pour évacuer les gaz de traitement restants ou le gaz de purge ; une unité de support de substrat pour porter un substrat, l'unité de support de substrat étant configurée pour pouvoir se déplacer par rapport à l'unité d'alimentation en gaz, le dispositif de dépôt de couche mince étant caractérisé en ce que l'unité de support de substrat exécute au moins un mouvement en boucle comprenant une pluralité de répétitions de mouvements progressifs vers l'avant et de mouvements progressifs vers l'arrière, et la distance du mouvement en boucle entre la position initiale du substrat et sa position finale, lors de l'exécution dudit mouvement en boucle, est supérieure ou égale à la distance dudit module d'alimentation en gaz.
본 발명은 박막증착장치에 관한 것으로서, 본 발명에 따른 박막증착장치는 원료가스와 반응가스를 포함하는 복수의 공정가스와 퍼지가스를 공급하고, 잔존하는 상기 공정가스 또는 상기 퍼지가스를 배기하는 가스공급모듈을 적어도 하나 이상 구비한 가스공급부 및 기판을 지지하며 상기 가스공급부에 대해 이동 가능하게 구비되는 기판지지부를 포함하고, 상기 기판지지부는 복수회의 단계별 전진 및 단계별 후진을 포함하는 적어도 하나의 루프이동을 수행하며, 상기 하나의 루프이동을 하는 경우에 상기 기판의 최초위치와 최후위치 사이의 루프이동거리는 상기 하나의 가스공급모듈의 거리 이상인 것을 특징으로 한다.</description><language>eng ; fre ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151105&DB=EPODOC&CC=WO&NR=2015167114A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151105&DB=EPODOC&CC=WO&NR=2015167114A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>HA, JOO-IL</creatorcontrib><creatorcontrib>LEE, WOO-JIN</creatorcontrib><creatorcontrib>LEE, DON-HEE</creatorcontrib><creatorcontrib>SHIN, KI-JO</creatorcontrib><creatorcontrib>HWANG, SANG-SOO</creatorcontrib><title>THIN FILM DEPOSITION DEVICE</title><description>The present invention relates to a thin film deposition device, and the thin film deposition device according to the present invention comprises: a gas supply unit for supplying a plurality of process gases, including a raw material gas and a reaction gas, and a purge gas, the gas supply unit having at least one gas supply module for discharging the remaining process gases or the purge gas; and a substrate support unit for supporting a substrate, the substrate support unit being configured to be able to move with regard to the gas supply unit, the thin film deposition device being characterized in that the substrate support unit performs at least one loop movement including a plurality of times of stepwise forward movements and stepwise backward movements, and the loop movement distance between the initial position of the substrate and the final position thereof, when performing the one loop movement, is equal to or larger than the distance of the one gas supply module.
La présente invention concerne un dispositif de dépôt de couche mince, et le dispositif de dépôt de couche mince selon la présente invention comporte : une unité d'alimentation en gaz pour fournir une pluralité de gaz de traitement, comprenant un gaz de matière première et un gaz de réaction, ainsi qu'un gaz de purge, l'unité d'alimentation en gaz ayant au moins un module d'alimentation en gaz pour évacuer les gaz de traitement restants ou le gaz de purge ; une unité de support de substrat pour porter un substrat, l'unité de support de substrat étant configurée pour pouvoir se déplacer par rapport à l'unité d'alimentation en gaz, le dispositif de dépôt de couche mince étant caractérisé en ce que l'unité de support de substrat exécute au moins un mouvement en boucle comprenant une pluralité de répétitions de mouvements progressifs vers l'avant et de mouvements progressifs vers l'arrière, et la distance du mouvement en boucle entre la position initiale du substrat et sa position finale, lors de l'exécution dudit mouvement en boucle, est supérieure ou égale à la distance dudit module d'alimentation en gaz.
본 발명은 박막증착장치에 관한 것으로서, 본 발명에 따른 박막증착장치는 원료가스와 반응가스를 포함하는 복수의 공정가스와 퍼지가스를 공급하고, 잔존하는 상기 공정가스 또는 상기 퍼지가스를 배기하는 가스공급모듈을 적어도 하나 이상 구비한 가스공급부 및 기판을 지지하며 상기 가스공급부에 대해 이동 가능하게 구비되는 기판지지부를 포함하고, 상기 기판지지부는 복수회의 단계별 전진 및 단계별 후진을 포함하는 적어도 하나의 루프이동을 수행하며, 상기 하나의 루프이동을 하는 경우에 상기 기판의 최초위치와 최후위치 사이의 루프이동거리는 상기 하나의 가스공급모듈의 거리 이상인 것을 특징으로 한다.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAO8fD0U3Dz9PFVcHEN8A_2DPH09wMywzydXXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXy4v5GBoamhmbmhoYmjoTFxqgDJWyFT</recordid><startdate>20151105</startdate><enddate>20151105</enddate><creator>HA, JOO-IL</creator><creator>LEE, WOO-JIN</creator><creator>LEE, DON-HEE</creator><creator>SHIN, KI-JO</creator><creator>HWANG, SANG-SOO</creator><scope>EVB</scope></search><sort><creationdate>20151105</creationdate><title>THIN FILM DEPOSITION DEVICE</title><author>HA, JOO-IL ; LEE, WOO-JIN ; LEE, DON-HEE ; SHIN, KI-JO ; HWANG, SANG-SOO</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2015167114A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre ; kor</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>HA, JOO-IL</creatorcontrib><creatorcontrib>LEE, WOO-JIN</creatorcontrib><creatorcontrib>LEE, DON-HEE</creatorcontrib><creatorcontrib>SHIN, KI-JO</creatorcontrib><creatorcontrib>HWANG, SANG-SOO</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>HA, JOO-IL</au><au>LEE, WOO-JIN</au><au>LEE, DON-HEE</au><au>SHIN, KI-JO</au><au>HWANG, SANG-SOO</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>THIN FILM DEPOSITION DEVICE</title><date>2015-11-05</date><risdate>2015</risdate><abstract>The present invention relates to a thin film deposition device, and the thin film deposition device according to the present invention comprises: a gas supply unit for supplying a plurality of process gases, including a raw material gas and a reaction gas, and a purge gas, the gas supply unit having at least one gas supply module for discharging the remaining process gases or the purge gas; and a substrate support unit for supporting a substrate, the substrate support unit being configured to be able to move with regard to the gas supply unit, the thin film deposition device being characterized in that the substrate support unit performs at least one loop movement including a plurality of times of stepwise forward movements and stepwise backward movements, and the loop movement distance between the initial position of the substrate and the final position thereof, when performing the one loop movement, is equal to or larger than the distance of the one gas supply module.
La présente invention concerne un dispositif de dépôt de couche mince, et le dispositif de dépôt de couche mince selon la présente invention comporte : une unité d'alimentation en gaz pour fournir une pluralité de gaz de traitement, comprenant un gaz de matière première et un gaz de réaction, ainsi qu'un gaz de purge, l'unité d'alimentation en gaz ayant au moins un module d'alimentation en gaz pour évacuer les gaz de traitement restants ou le gaz de purge ; une unité de support de substrat pour porter un substrat, l'unité de support de substrat étant configurée pour pouvoir se déplacer par rapport à l'unité d'alimentation en gaz, le dispositif de dépôt de couche mince étant caractérisé en ce que l'unité de support de substrat exécute au moins un mouvement en boucle comprenant une pluralité de répétitions de mouvements progressifs vers l'avant et de mouvements progressifs vers l'arrière, et la distance du mouvement en boucle entre la position initiale du substrat et sa position finale, lors de l'exécution dudit mouvement en boucle, est supérieure ou égale à la distance dudit module d'alimentation en gaz.
본 발명은 박막증착장치에 관한 것으로서, 본 발명에 따른 박막증착장치는 원료가스와 반응가스를 포함하는 복수의 공정가스와 퍼지가스를 공급하고, 잔존하는 상기 공정가스 또는 상기 퍼지가스를 배기하는 가스공급모듈을 적어도 하나 이상 구비한 가스공급부 및 기판을 지지하며 상기 가스공급부에 대해 이동 가능하게 구비되는 기판지지부를 포함하고, 상기 기판지지부는 복수회의 단계별 전진 및 단계별 후진을 포함하는 적어도 하나의 루프이동을 수행하며, 상기 하나의 루프이동을 하는 경우에 상기 기판의 최초위치와 최후위치 사이의 루프이동거리는 상기 하나의 가스공급모듈의 거리 이상인 것을 특징으로 한다.</abstract><oa>free_for_read</oa></addata></record> |
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| title | THIN FILM DEPOSITION DEVICE |
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