MULTILAYER STACKING STRUCTURE OF SILICON-BASED LED MODULE, AND MANUFACTURING METHOD

A multilayer stacking structure of a silicon-based LED module, comprising a light source module layer and a drive module layer, wherein the light source module layer comprises an upper substrate (1) and an LED chip (11), the LED chip (11) being arranged in a first groove (12) of the upper substrate...

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Hauptverfasser: LIANG, RUNYUAN, ZHANG, CHUNWANG, XU, ZHENLEI, BAO, HOUHUA, LIN, MINGFENG, WEI, JIA, HU, DAN
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creator LIANG, RUNYUAN
ZHANG, CHUNWANG
XU, ZHENLEI
BAO, HOUHUA
LIN, MINGFENG
WEI, JIA
HU, DAN
description A multilayer stacking structure of a silicon-based LED module, comprising a light source module layer and a drive module layer, wherein the light source module layer comprises an upper substrate (1) and an LED chip (11), the LED chip (11) being arranged in a first groove (12) of the upper substrate (1); and the drive module layer comprises a lower substrate (2) and a drive IC (21), the drive IC (21) being arranged in a second groove (22) of the lower substrate (2), the upper substrate (1) and the lower substrate (2) being superposed together. A manufacturing method for a multilayer stacking structure of a silicon-based LED module. Micro size etching, wiring and encapsulation corresponding to the LED chip (11) and the drive IC (21) can be accurately controlled using the micromachining technology. This integrated design simplifies lamp assembling, reduces electric connection power loss so that the power is improved, reduces system volume, reduces costs, and improves heat dissipation effects. La présente inventi
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2015006936A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2015006936A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2015006936A13</originalsourceid><addsrcrecordid>eNrjZAj2DfUJ8fRxjHQNUggOcXT29vRzBzKCQp1DQoNcFfzdFII9fTyd_f10nRyDXV0UfIDY198l1MdVR8HRD8h29At1cwQpBmn0dQ3x8HfhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBoamBgZmlsZmjobGxKkCANLmMNg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MULTILAYER STACKING STRUCTURE OF SILICON-BASED LED MODULE, AND MANUFACTURING METHOD</title><source>esp@cenet</source><creator>LIANG, RUNYUAN ; ZHANG, CHUNWANG ; XU, ZHENLEI ; BAO, HOUHUA ; LIN, MINGFENG ; WEI, JIA ; HU, DAN</creator><creatorcontrib>LIANG, RUNYUAN ; ZHANG, CHUNWANG ; XU, ZHENLEI ; BAO, HOUHUA ; LIN, MINGFENG ; WEI, JIA ; HU, DAN</creatorcontrib><description>A multilayer stacking structure of a silicon-based LED module, comprising a light source module layer and a drive module layer, wherein the light source module layer comprises an upper substrate (1) and an LED chip (11), the LED chip (11) being arranged in a first groove (12) of the upper substrate (1); and the drive module layer comprises a lower substrate (2) and a drive IC (21), the drive IC (21) being arranged in a second groove (22) of the lower substrate (2), the upper substrate (1) and the lower substrate (2) being superposed together. A manufacturing method for a multilayer stacking structure of a silicon-based LED module. Micro size etching, wiring and encapsulation corresponding to the LED chip (11) and the drive IC (21) can be accurately controlled using the micromachining technology. This integrated design simplifies lamp assembling, reduces electric connection power loss so that the power is improved, reduces system volume, reduces costs, and improves heat dissipation effects. La présente inventi</description><language>chi ; eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150122&amp;DB=EPODOC&amp;CC=WO&amp;NR=2015006936A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150122&amp;DB=EPODOC&amp;CC=WO&amp;NR=2015006936A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIANG, RUNYUAN</creatorcontrib><creatorcontrib>ZHANG, CHUNWANG</creatorcontrib><creatorcontrib>XU, ZHENLEI</creatorcontrib><creatorcontrib>BAO, HOUHUA</creatorcontrib><creatorcontrib>LIN, MINGFENG</creatorcontrib><creatorcontrib>WEI, JIA</creatorcontrib><creatorcontrib>HU, DAN</creatorcontrib><title>MULTILAYER STACKING STRUCTURE OF SILICON-BASED LED MODULE, AND MANUFACTURING METHOD</title><description>A multilayer stacking structure of a silicon-based LED module, comprising a light source module layer and a drive module layer, wherein the light source module layer comprises an upper substrate (1) and an LED chip (11), the LED chip (11) being arranged in a first groove (12) of the upper substrate (1); and the drive module layer comprises a lower substrate (2) and a drive IC (21), the drive IC (21) being arranged in a second groove (22) of the lower substrate (2), the upper substrate (1) and the lower substrate (2) being superposed together. A manufacturing method for a multilayer stacking structure of a silicon-based LED module. Micro size etching, wiring and encapsulation corresponding to the LED chip (11) and the drive IC (21) can be accurately controlled using the micromachining technology. This integrated design simplifies lamp assembling, reduces electric connection power loss so that the power is improved, reduces system volume, reduces costs, and improves heat dissipation effects. La présente inventi</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAj2DfUJ8fRxjHQNUggOcXT29vRzBzKCQp1DQoNcFfzdFII9fTyd_f10nRyDXV0UfIDY198l1MdVR8HRD8h29At1cwQpBmn0dQ3x8HfhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXx4f5GBoamBgZmlsZmjobGxKkCANLmMNg</recordid><startdate>20150122</startdate><enddate>20150122</enddate><creator>LIANG, RUNYUAN</creator><creator>ZHANG, CHUNWANG</creator><creator>XU, ZHENLEI</creator><creator>BAO, HOUHUA</creator><creator>LIN, MINGFENG</creator><creator>WEI, JIA</creator><creator>HU, DAN</creator><scope>EVB</scope></search><sort><creationdate>20150122</creationdate><title>MULTILAYER STACKING STRUCTURE OF SILICON-BASED LED MODULE, AND MANUFACTURING METHOD</title><author>LIANG, RUNYUAN ; ZHANG, CHUNWANG ; XU, ZHENLEI ; BAO, HOUHUA ; LIN, MINGFENG ; WEI, JIA ; HU, DAN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2015006936A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>chi ; eng ; fre</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>LIANG, RUNYUAN</creatorcontrib><creatorcontrib>ZHANG, CHUNWANG</creatorcontrib><creatorcontrib>XU, ZHENLEI</creatorcontrib><creatorcontrib>BAO, HOUHUA</creatorcontrib><creatorcontrib>LIN, MINGFENG</creatorcontrib><creatorcontrib>WEI, JIA</creatorcontrib><creatorcontrib>HU, DAN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIANG, RUNYUAN</au><au>ZHANG, CHUNWANG</au><au>XU, ZHENLEI</au><au>BAO, HOUHUA</au><au>LIN, MINGFENG</au><au>WEI, JIA</au><au>HU, DAN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MULTILAYER STACKING STRUCTURE OF SILICON-BASED LED MODULE, AND MANUFACTURING METHOD</title><date>2015-01-22</date><risdate>2015</risdate><abstract>A multilayer stacking structure of a silicon-based LED module, comprising a light source module layer and a drive module layer, wherein the light source module layer comprises an upper substrate (1) and an LED chip (11), the LED chip (11) being arranged in a first groove (12) of the upper substrate (1); and the drive module layer comprises a lower substrate (2) and a drive IC (21), the drive IC (21) being arranged in a second groove (22) of the lower substrate (2), the upper substrate (1) and the lower substrate (2) being superposed together. A manufacturing method for a multilayer stacking structure of a silicon-based LED module. Micro size etching, wiring and encapsulation corresponding to the LED chip (11) and the drive IC (21) can be accurately controlled using the micromachining technology. This integrated design simplifies lamp assembling, reduces electric connection power loss so that the power is improved, reduces system volume, reduces costs, and improves heat dissipation effects. La présente inventi</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title MULTILAYER STACKING STRUCTURE OF SILICON-BASED LED MODULE, AND MANUFACTURING METHOD
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