NAND FLASH WORD LINE MANAGEMENT

Methods for improving NAND flash memory yields by identifying memory blocks with benign word line defects are described. Memory blocks including word line defects may be classified as incomplete memory blocks and may be used for storing data fragments. A data fragment may correspond with data writte...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	AHWAL, TALAL, ELI, YIGAL, YURZOLA, DAMIAN, DHAKSHINAMURTHY, KRISHNAMURTHY, PENG, YONG, NAGABHIRAVA, RAJEEV, BERCKMANN, TUCKER, DEAN, HARY, ARJUN, HELLER, TAL
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
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