METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

This method for producing a semiconductor device has: a first step for forming a flat silicon layer (107) on a silicon substrate (101), and forming a first and a second columnar silicon layer (104, 105) on the flat silicon layer; a second step for forming a gate-insulating film (113) around the peri...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LO PATRICK GUO-QIANG, LI YISUO, HARADA NOZOMU, NAKAMURA HIROKI, KAMATH AASHIT RAMACHANDRA, PHUA TENG SOONG, WANG XINPENG, MASUOKA FUJIO, CHEN ZHIXIAN
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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