METAL OXIDE TFT STABILITY IMPROVEMENT

A metal oxide thin film transistor incorporating reduced hydrogen silicon-containing layers and methods of making the same are disclosed herein. The thin film transistor can include a substrate, a metal oxide semiconductor layer, a substantially hydrogen free channel interface layer and a cap layer...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	YIM, DONG-KIL, PARK, BEOM SOO, CHOI, SOO YOUNG, WON, TAE K
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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