TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING
Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove...
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| creator | LAM, GARY KA HO XU, KUN TU, WENIANG ZHANG, JIMIN JEW, STEPHEN WANG, ZHIHONG OSTERHELD, THOMAS H KITAJIMA, TOMOHIKO MAI, DAVID H SHEN, SHIH-HAUR WALTERS |
| description | Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
L'invention concerne des procédés de polissage chimicomécanique (CMP) de substrats de semi-conducteur, et plus particulièrement une commande de température durant un tel polissage chimicomécanique. Selon un aspect, le procédé comprend le polissage du substrat avec une surface de polissage durant un processus de polissage pour retirer une partie du matériau conducteur, la surveillance répétée d'une température de la surface de polissage durant le processus de polissage, et l'exposition de la surface de polissage à un processus de trempe en réponse à la température surveillée de façon à obtenir une valeur cible pour la température surveillée durant le processus de polissage. |
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L'invention concerne des procédés de polissage chimicomécanique (CMP) de substrats de semi-conducteur, et plus particulièrement une commande de température durant un tel polissage chimicomécanique. Selon un aspect, le procédé comprend le polissage du substrat avec une surface de polissage durant un processus de polissage pour retirer une partie du matériau conducteur, la surveillance répétée d'une température de la surface de polissage durant le processus de polissage, et l'exposition de la surface de polissage à un processus de trempe en réponse à la température surveillée de façon à obtenir une valeur cible pour la température surveillée durant le processus de polissage.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; DRESSING OR CONDITIONING OF ABRADING SURFACES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; SEMICONDUCTOR DEVICES ; TRANSPORTING</subject><creationdate>2014</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140130&DB=EPODOC&CC=WO&NR=2014018027A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20140130&DB=EPODOC&CC=WO&NR=2014018027A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LAM, GARY KA HO</creatorcontrib><creatorcontrib>XU, KUN</creatorcontrib><creatorcontrib>TU, WENIANG</creatorcontrib><creatorcontrib>ZHANG, JIMIN</creatorcontrib><creatorcontrib>JEW, STEPHEN</creatorcontrib><creatorcontrib>WANG, ZHIHONG</creatorcontrib><creatorcontrib>OSTERHELD, THOMAS H</creatorcontrib><creatorcontrib>KITAJIMA, TOMOHIKO</creatorcontrib><creatorcontrib>MAI, DAVID H</creatorcontrib><creatorcontrib>SHEN, SHIH-HAUR WALTERS</creatorcontrib><title>TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING</title><description>Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
L'invention concerne des procédés de polissage chimicomécanique (CMP) de substrats de semi-conducteur, et plus particulièrement une commande de température durant un tel polissage chimicomécanique. Selon un aspect, le procédé comprend le polissage du substrat avec une surface de polissage durant un processus de polissage pour retirer une partie du matériau conducteur, la surveillance répétée d'une température de la surface de polissage durant le processus de polissage, et l'exposition de la surface de polissage à un processus de trempe en réponse à la température surveillée de façon à obtenir une valeur cible pour la température surveillée durant le processus de polissage.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2014</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAJcfUNcA1yDAkNclVw9vcLCfL3UfB3U3D2cPX1dHb0UfB1dfZw9AMzA_x9PIM9PP3ceRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfLi_kYGhiYGhhYGRuaOhMXGqAGrfKEk</recordid><startdate>20140130</startdate><enddate>20140130</enddate><creator>LAM, GARY KA HO</creator><creator>XU, KUN</creator><creator>TU, WENIANG</creator><creator>ZHANG, JIMIN</creator><creator>JEW, STEPHEN</creator><creator>WANG, ZHIHONG</creator><creator>OSTERHELD, THOMAS H</creator><creator>KITAJIMA, TOMOHIKO</creator><creator>MAI, DAVID H</creator><creator>SHEN, SHIH-HAUR WALTERS</creator><scope>EVB</scope></search><sort><creationdate>20140130</creationdate><title>TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING</title><author>LAM, GARY KA HO ; XU, KUN ; TU, WENIANG ; ZHANG, JIMIN ; JEW, STEPHEN ; WANG, ZHIHONG ; OSTERHELD, THOMAS H ; KITAJIMA, TOMOHIKO ; MAI, DAVID H ; SHEN, SHIH-HAUR WALTERS</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2014018027A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2014</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>LAM, GARY KA HO</creatorcontrib><creatorcontrib>XU, KUN</creatorcontrib><creatorcontrib>TU, WENIANG</creatorcontrib><creatorcontrib>ZHANG, JIMIN</creatorcontrib><creatorcontrib>JEW, STEPHEN</creatorcontrib><creatorcontrib>WANG, ZHIHONG</creatorcontrib><creatorcontrib>OSTERHELD, THOMAS H</creatorcontrib><creatorcontrib>KITAJIMA, TOMOHIKO</creatorcontrib><creatorcontrib>MAI, DAVID H</creatorcontrib><creatorcontrib>SHEN, SHIH-HAUR WALTERS</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LAM, GARY KA HO</au><au>XU, KUN</au><au>TU, WENIANG</au><au>ZHANG, JIMIN</au><au>JEW, STEPHEN</au><au>WANG, ZHIHONG</au><au>OSTERHELD, THOMAS H</au><au>KITAJIMA, TOMOHIKO</au><au>MAI, DAVID H</au><au>SHEN, SHIH-HAUR WALTERS</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING</title><date>2014-01-30</date><risdate>2014</risdate><abstract>Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.
L'invention concerne des procédés de polissage chimicomécanique (CMP) de substrats de semi-conducteur, et plus particulièrement une commande de température durant un tel polissage chimicomécanique. Selon un aspect, le procédé comprend le polissage du substrat avec une surface de polissage durant un processus de polissage pour retirer une partie du matériau conducteur, la surveillance répétée d'une température de la surface de polissage durant le processus de polissage, et l'exposition de la surface de polissage à un processus de trempe en réponse à la température surveillée de façon à obtenir une valeur cible pour la température surveillée durant le processus de polissage.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING |
| title | TEMPERATURE CONTROL OF CHEMICAL MECHANICAL POLISHING |
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