POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE
A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosi...
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| creator | MEDD, STEVEN LIU, JUN HURD, TRACE QUENTIN SUN, LAISHENG JENQ, SHRANE NING |
| description | A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.
L'invention porte sur une composition de nettoyage et sur un procédé pour le nettoyage de résidu et de contaminants après polissage chimico-mécanique (CMP) hors d'un dispositif microélectronique ayant ledit résidu et lesdits contaminants sur celui-ci. Les compositions de nettoyage comprennent au moins une base quaternaire, au moins une amine, au moins un inhibiteur de corrosion azole, au moins un agent réducteur et au moins un solvant. La composition permet un nettoyage hautement efficace du résidu et du matériau contaminant après CMP hors de la surface du dispositif microélectronique tout en étant compatible avec des couches barrière, les couches barrière étant pratiquement exemptes de tantale ou de titane. |
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L'invention porte sur une composition de nettoyage et sur un procédé pour le nettoyage de résidu et de contaminants après polissage chimico-mécanique (CMP) hors d'un dispositif microélectronique ayant ledit résidu et lesdits contaminants sur celui-ci. Les compositions de nettoyage comprennent au moins une base quaternaire, au moins une amine, au moins un inhibiteur de corrosion azole, au moins un agent réducteur et au moins un solvant. La composition permet un nettoyage hautement efficace du résidu et du matériau contaminant après CMP hors de la surface du dispositif microélectronique tout en étant compatible avec des couches barrière, les couches barrière étant pratiquement exemptes de tantale ou de titane.</description><language>eng ; fre</language><subject>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES ; BASIC ELECTRIC ELEMENTS ; CANDLES ; CHEMISTRY ; DETERGENT COMPOSITIONS ; DETERGENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FATTY ACIDS THEREFROM ; METALLURGY ; RECOVERY OF GLYCEROL ; RESIN SOAPS ; SEMICONDUCTOR DEVICES ; SOAP OR SOAP-MAKING ; USE OF SINGLE SUBSTANCES AS DETERGENTS</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130926&DB=EPODOC&CC=WO&NR=2013142250A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130926&DB=EPODOC&CC=WO&NR=2013142250A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MEDD, STEVEN</creatorcontrib><creatorcontrib>LIU, JUN</creatorcontrib><creatorcontrib>HURD, TRACE QUENTIN</creatorcontrib><creatorcontrib>SUN, LAISHENG</creatorcontrib><creatorcontrib>JENQ, SHRANE NING</creatorcontrib><title>POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE</title><description>A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.
L'invention porte sur une composition de nettoyage et sur un procédé pour le nettoyage de résidu et de contaminants après polissage chimico-mécanique (CMP) hors d'un dispositif microélectronique ayant ledit résidu et lesdits contaminants sur celui-ci. Les compositions de nettoyage comprennent au moins une base quaternaire, au moins une amine, au moins un inhibiteur de corrosion azole, au moins un agent réducteur et au moins un solvant. La composition permet un nettoyage hautement efficace du résidu et du matériau contaminant après CMP hors de la surface du dispositif microélectronique tout en étant compatible avec des couches barrière, les couches barrière étant pratiquement exemptes de tantale ou de titane.</description><subject>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CANDLES</subject><subject>CHEMISTRY</subject><subject>DETERGENT COMPOSITIONS</subject><subject>DETERGENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FATTY ACIDS THEREFROM</subject><subject>METALLURGY</subject><subject>RECOVERY OF GLYCEROL</subject><subject>RESIN SOAPS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SOAP OR SOAP-MAKING</subject><subject>USE OF SINGLE SUBSTANCES AS DETERGENTS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgM8A8O0XX2DVBw8w_yDfVxDPH091PwcAzz9HNX8PQNCPIPc3VRcHIMCvJ0DVLwcYwEks7-vgFAdU6ePp4hkQqOfi4Kzj6ujn4gHQGuQSBzHP2cXXkYWNMSc4pTeaE0N4Oym2uIs4duakF-fGpxQWJyal5qSXy4v5GBobGhiZGRqYGjoTFxqgATzTKi</recordid><startdate>20130926</startdate><enddate>20130926</enddate><creator>MEDD, STEVEN</creator><creator>LIU, JUN</creator><creator>HURD, TRACE QUENTIN</creator><creator>SUN, LAISHENG</creator><creator>JENQ, SHRANE NING</creator><scope>EVB</scope></search><sort><creationdate>20130926</creationdate><title>POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE</title><author>MEDD, STEVEN ; LIU, JUN ; HURD, TRACE QUENTIN ; SUN, LAISHENG ; JENQ, SHRANE NING</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2013142250A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2013</creationdate><topic>ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CANDLES</topic><topic>CHEMISTRY</topic><topic>DETERGENT COMPOSITIONS</topic><topic>DETERGENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FATTY ACIDS THEREFROM</topic><topic>METALLURGY</topic><topic>RECOVERY OF GLYCEROL</topic><topic>RESIN SOAPS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SOAP OR SOAP-MAKING</topic><topic>USE OF SINGLE SUBSTANCES AS DETERGENTS</topic><toplevel>online_resources</toplevel><creatorcontrib>MEDD, STEVEN</creatorcontrib><creatorcontrib>LIU, JUN</creatorcontrib><creatorcontrib>HURD, TRACE QUENTIN</creatorcontrib><creatorcontrib>SUN, LAISHENG</creatorcontrib><creatorcontrib>JENQ, SHRANE NING</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MEDD, STEVEN</au><au>LIU, JUN</au><au>HURD, TRACE QUENTIN</au><au>SUN, LAISHENG</au><au>JENQ, SHRANE NING</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE</title><date>2013-09-26</date><risdate>2013</risdate><abstract>A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.
L'invention porte sur une composition de nettoyage et sur un procédé pour le nettoyage de résidu et de contaminants après polissage chimico-mécanique (CMP) hors d'un dispositif microélectronique ayant ledit résidu et lesdits contaminants sur celui-ci. Les compositions de nettoyage comprennent au moins une base quaternaire, au moins une amine, au moins un inhibiteur de corrosion azole, au moins un agent réducteur et au moins un solvant. La composition permet un nettoyage hautement efficace du résidu et du matériau contaminant après CMP hors de la surface du dispositif microélectronique tout en étant compatible avec des couches barrière, les couches barrière étant pratiquement exemptes de tantale ou de titane.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ANIMAL AND VEGETABLE OILS, FATS, FATTY SUBSTANCES AND WAXES BASIC ELECTRIC ELEMENTS CANDLES CHEMISTRY DETERGENT COMPOSITIONS DETERGENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FATTY ACIDS THEREFROM METALLURGY RECOVERY OF GLYCEROL RESIN SOAPS SEMICONDUCTOR DEVICES SOAP OR SOAP-MAKING USE OF SINGLE SUBSTANCES AS DETERGENTS |
| title | POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE |
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