PHOTOLITHOGRAPHY MASK DESIGN SIMPLIFICATION
A photolithography mask design in simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are...
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| creator | ERTEN, HALE BAIDYA, BIKRAM SINGH, VIVEK K DANDEKAR, OMKAR S |
| description | A photolithography mask design in simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features.
L'invention concerne un masque de photolithographie simplifié. Dans un exemple, la conception d'un masque cible est optimisée pour un masque de photolithographie. Les axes médians de la conception et les fonctionnalités d'assistance sont identifiés sur le masque optimisé. Ceux-ci sont représentés de manière simplifiée par des lignes. Les lignes qui sont éloignées d'une caractéristique de conception correspondante sont rognées. Les lignes restantes sont simplifiées puis épaissies pour former les fonctionnalités d'assistance. |
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L'invention concerne un masque de photolithographie simplifié. Dans un exemple, la conception d'un masque cible est optimisée pour un masque de photolithographie. Les axes médians de la conception et les fonctionnalités d'assistance sont identifiés sur le masque optimisé. Ceux-ci sont représentés de manière simplifiée par des lignes. Les lignes qui sont éloignées d'une caractéristique de conception correspondante sont rognées. Les lignes restantes sont simplifiées puis épaissies pour former les fonctionnalités d'assistance.</description><language>eng ; fre</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130704&DB=EPODOC&CC=WO&NR=2013101118A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130704&DB=EPODOC&CC=WO&NR=2013101118A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>ERTEN, HALE</creatorcontrib><creatorcontrib>BAIDYA, BIKRAM</creatorcontrib><creatorcontrib>SINGH, VIVEK K</creatorcontrib><creatorcontrib>DANDEKAR, OMKAR S</creatorcontrib><title>PHOTOLITHOGRAPHY MASK DESIGN SIMPLIFICATION</title><description>A photolithography mask design in simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features.
L'invention concerne un masque de photolithographie simplifié. Dans un exemple, la conception d'un masque cible est optimisée pour un masque de photolithographie. Les axes médians de la conception et les fonctionnalités d'assistance sont identifiés sur le masque optimisé. Ceux-ci sont représentés de manière simplifiée par des lignes. Les lignes qui sont éloignées d'une caractéristique de conception correspondante sont rognées. Les lignes restantes sont simplifiées puis épaissies pour former les fonctionnalités d'assistance.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAO8PAP8ffxDPHwdw9yDPCIVPB1DPZWcHEN9nT3Uwj29A3w8XTzdHYM8fT342FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8eH-RgaGxoYGhoaGFo6GxsSpAgAzgiYc</recordid><startdate>20130704</startdate><enddate>20130704</enddate><creator>ERTEN, HALE</creator><creator>BAIDYA, BIKRAM</creator><creator>SINGH, VIVEK K</creator><creator>DANDEKAR, OMKAR S</creator><scope>EVB</scope></search><sort><creationdate>20130704</creationdate><title>PHOTOLITHOGRAPHY MASK DESIGN SIMPLIFICATION</title><author>ERTEN, HALE ; BAIDYA, BIKRAM ; SINGH, VIVEK K ; DANDEKAR, OMKAR S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2013101118A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2013</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><toplevel>online_resources</toplevel><creatorcontrib>ERTEN, HALE</creatorcontrib><creatorcontrib>BAIDYA, BIKRAM</creatorcontrib><creatorcontrib>SINGH, VIVEK K</creatorcontrib><creatorcontrib>DANDEKAR, OMKAR S</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>ERTEN, HALE</au><au>BAIDYA, BIKRAM</au><au>SINGH, VIVEK K</au><au>DANDEKAR, OMKAR S</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PHOTOLITHOGRAPHY MASK DESIGN SIMPLIFICATION</title><date>2013-07-04</date><risdate>2013</risdate><abstract>A photolithography mask design in simplified. In one example, a target mask design is optimized for a photolithography mask. Medial axes of the design and assist features on the optimized mask are identified. These are simplified to lines. Lines that are distant from a respective design feature are pruned. The remaining lines are simplified and then thickened to form assist features.
L'invention concerne un masque de photolithographie simplifié. Dans un exemple, la conception d'un masque cible est optimisée pour un masque de photolithographie. Les axes médians de la conception et les fonctionnalités d'assistance sont identifiés sur le masque optimisé. Ceux-ci sont représentés de manière simplifiée par des lignes. Les lignes qui sont éloignées d'une caractéristique de conception correspondante sont rognées. Les lignes restantes sont simplifiées puis épaissies pour former les fonctionnalités d'assistance.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS |
| title | PHOTOLITHOGRAPHY MASK DESIGN SIMPLIFICATION |
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