FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF

Provided are a field effect transistor and a manufacturing method thereof. The field effect transistor includes: a substrate (101); a source (S) and a drain (D), one of which is formed on a bulge (100) on the upper surface of the substrate (101), and the other in the substrate (101) at the bottom of...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HAI, CHAOHE, LUO, JIAJUN, HAN, ZHENGSHENG, BI, JINSHUN
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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