MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR
Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material s...
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| creator | BROWN, GREGORY STONE, PETER DICKEY, KATHERINE WOODRUFF, JACOB JACKREL, DAVID B POLLOCK, KRISTIN |
| description | Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
L'invention concerne des procédés et des dispositifs qui permettent de former un semi-conducteur à base de matériaux du groupe multinaire. Dans un mode de réalisation, un procédé comprend le dépôt d'un matériau précurseur sur un substrat, le matériau précurseur pouvant comprendre ou pouvant être utilisé avec un additif destiné à réduire à un minimum la concentration de substances du groupe IIIA comme le Ga dans la partie arrière de la couche finale du semi-conducteur. L'additif peut être un additif du groupe IB hormis le cuivre, sous une forme élémentaire ou en alliage. Certains modes de réalisation peuvent utiliser à la fois le sélénium et le soufre, pour former un alliage semi-conducteur sénaire ou supérieur. |
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L'invention concerne des procédés et des dispositifs qui permettent de former un semi-conducteur à base de matériaux du groupe multinaire. Dans un mode de réalisation, un procédé comprend le dépôt d'un matériau précurseur sur un substrat, le matériau précurseur pouvant comprendre ou pouvant être utilisé avec un additif destiné à réduire à un minimum la concentration de substances du groupe IIIA comme le Ga dans la partie arrière de la couche finale du semi-conducteur. L'additif peut être un additif du groupe IB hormis le cuivre, sous une forme élémentaire ou en alliage. Certains modes de réalisation peuvent utiliser à la fois le sélénium et le soufre, pour former un alliage semi-conducteur sénaire ou supérieur.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC ; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS ; REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION ; SEMICONDUCTOR DEVICES ; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS ; TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><creationdate>2013</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130103&DB=EPODOC&CC=WO&NR=2013003439A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20130103&DB=EPODOC&CC=WO&NR=2013003439A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>BROWN, GREGORY</creatorcontrib><creatorcontrib>STONE, PETER</creatorcontrib><creatorcontrib>DICKEY, KATHERINE</creatorcontrib><creatorcontrib>WOODRUFF, JACOB</creatorcontrib><creatorcontrib>JACKREL, DAVID B</creatorcontrib><creatorcontrib>POLLOCK, KRISTIN</creatorcontrib><title>MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR</title><description>Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
L'invention concerne des procédés et des dispositifs qui permettent de former un semi-conducteur à base de matériaux du groupe multinaire. Dans un mode de réalisation, un procédé comprend le dépôt d'un matériau précurseur sur un substrat, le matériau précurseur pouvant comprendre ou pouvant être utilisé avec un additif destiné à réduire à un minimum la concentration de substances du groupe IIIA comme le Ga dans la partie arrière de la couche finale du semi-conducteur. L'additif peut être un additif du groupe IB hormis le cuivre, sous une forme élémentaire ou en alliage. Certains modes de réalisation peuvent utiliser à la fois le sélénium et le soufre, pour former un alliage semi-conducteur sénaire ou supérieur.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</subject><subject>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</subject><subject>REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</subject><subject>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2013</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZND3DfUJ8dT1cwyKVHAP8g8NUPB0UnD0c1EI83RUcHIMdnVRCHb19XT293MJdQ7xD-JhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfHh_kYGhsYGBsYmxpaOhsbEqQIAiIgmsw</recordid><startdate>20130103</startdate><enddate>20130103</enddate><creator>BROWN, GREGORY</creator><creator>STONE, PETER</creator><creator>DICKEY, KATHERINE</creator><creator>WOODRUFF, JACOB</creator><creator>JACKREL, DAVID B</creator><creator>POLLOCK, KRISTIN</creator><scope>EVB</scope></search><sort><creationdate>20130103</creationdate><title>MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR</title><author>BROWN, GREGORY ; STONE, PETER ; DICKEY, KATHERINE ; WOODRUFF, JACOB ; JACKREL, DAVID B ; POLLOCK, KRISTIN</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2013003439A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2013</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC</topic><topic>GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS</topic><topic>REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS</topic><topic>TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE</topic><toplevel>online_resources</toplevel><creatorcontrib>BROWN, GREGORY</creatorcontrib><creatorcontrib>STONE, PETER</creatorcontrib><creatorcontrib>DICKEY, KATHERINE</creatorcontrib><creatorcontrib>WOODRUFF, JACOB</creatorcontrib><creatorcontrib>JACKREL, DAVID B</creatorcontrib><creatorcontrib>POLLOCK, KRISTIN</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>BROWN, GREGORY</au><au>STONE, PETER</au><au>DICKEY, KATHERINE</au><au>WOODRUFF, JACOB</au><au>JACKREL, DAVID B</au><au>POLLOCK, KRISTIN</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR</title><date>2013-01-03</date><risdate>2013</risdate><abstract>Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
L'invention concerne des procédés et des dispositifs qui permettent de former un semi-conducteur à base de matériaux du groupe multinaire. Dans un mode de réalisation, un procédé comprend le dépôt d'un matériau précurseur sur un substrat, le matériau précurseur pouvant comprendre ou pouvant être utilisé avec un additif destiné à réduire à un minimum la concentration de substances du groupe IIIA comme le Ga dans la partie arrière de la couche finale du semi-conducteur. L'additif peut être un additif du groupe IB hormis le cuivre, sous une forme élémentaire ou en alliage. Certains modes de réalisation peuvent utiliser à la fois le sélénium et le soufre, pour former un alliage semi-conducteur sénaire ou supérieur.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGYGENERATION, TRANSMISSION OR DISTRIBUTION SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINSTCLIMATE CHANGE |
| title | MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR |
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