PREPARATION METHOD OF HIGH DENSITY ZINC OXIDE NANOMETER GRANULES

This invention relates to a preparation method of high density zinc oxide nanometer granules. In the method, diethyl zinc vapour diluted by inert gas and vapour of hydrogen peroxide aqueous solution are used as precursors, and high density zinc oxide nanometer granules are grown in atom layer deposi...

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Bibliographische Detailangaben
Hauptverfasser:	QIAN, KEJIA, ZHANG, WEI, DING, SHIJIN
Format:	Patent
Sprache:	chi ; eng ; fre
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F CRYSTAL GROWTH DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:	This invention relates to a preparation method of high density zinc oxide nanometer granules. In the method, diethyl zinc vapour diluted by inert gas and vapour of hydrogen peroxide aqueous solution are used as precursors, and high density zinc oxide nanometer granules are grown in atom layer deposition equipment in the manner of atom layer deposition. In the method, precursors, i.e., diethyl zinc vapour and vapour of hydrogen peroxide aqueous solution, are introduced into the reaction chamber alternatively in pulse mode, purging with inert gas between the introduction of the two precursors. By this invention, high density zinc oxide nanometer granules are produced by atom layer deposition technology, with the advantages of simple procedure, low cost, and exactly control of the size of nanometer granules. The obtained zinc oxide nanometer granules have average diameter of about 5~25nm, height of 2~10nm, and density of 1.0×1010~1.0×1011cm-2, and can be used as photoelectric conversion material in solar cells.