POLYIMIDES AS DIELECTRIC

The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of i) forming a layer comprising photocurable polyimide A by applying photocur- able polyimide A on a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	KIRNER, HANS JUERG, KASTLER, MARCEL, MARTIN, EMMANUEL
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ADHESIVES AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F,C08G BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS COMPOSITIONS BASED THEREON CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES GENERAL PROCESSES OF COMPOUNDING INKS LAYERED PRODUCTS LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONSONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS ORGANIC MACROMOLECULAR COMPOUNDS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING PERFORMING OPERATIONS POLISHES SEMICONDUCTOR DEVICES THEIR PREPARATION OR CHEMICAL WORKING-UP TRANSPORTING USE OF MATERIALS THEREFOR WOODSTAINS WORKING-UP
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Beschreibung
Zusammenfassung:	The present invention provides a process for the preparation of a transistor on a substrate, which transistor comprises a layer, which layer comprises polyimide B, which process comprises the steps of i) forming a layer comprising photocurable polyimide A by applying photocur- able polyimide A on a layer of the transistor or on the substrate ii) irradiating the layer comprising photocurable polyimide A with light of a wavelength of > = 360 nm in order to form the layer comprising polyimide B, and a transistor obtainable by that process. La présente invention concerne un procédé de préparation d'un transistor sur un substrat, ledit transistor comprenant une couche et ladite couche comprenant un polyimide B. Le procédé de l'invention comprend les étapes consistant à : i) former une couche comprenant un polyimide photodurcissable A en appliquant un polyimide photodurcissable A sur une couche du transistor ou sur le substrat, et ii) irradier la couche comprenant le polyimide photodurcissable A d'une lumière présentant une longueur d'onde supérieure ou égale à 360 nm pour former la couche comprenant le polyimide B. L'invention concerne en outre un transistor obtenu par ledit procédé.