PLASMA CVD APPARATUS

Provided is a plasma CVD apparatus, whereby a CVD film having excellent qualities can be formed by suppressing generation of flakes by preventing a raw material gas from forming an unnecessary film on a supply section. This plasma CVD apparatus is provided with: a vacuum chamber; a vacuum evacuation...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	TAMAGAKI, HIROSHI, OKIMOTO, TADAO
Format:	Patent
Sprache:	eng ; fre ; jpn
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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