DC VOLTAGE CHARGING OF CATHODE FOR PLASMA STRIKING

Methods for processing photomasks are provided herein. In some embodiments, a method for processing a photomask may include providing a photomask to a substrate support within a process chamber; providing a process gas to the process chamber having the photomask disposed therein; providing a negativ...

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Hauptverfasser:	OUYE, ALAN HIROSHI, BIVENS, DARIN, KNICK, DAVID
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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creator	OUYE, ALAN HIROSHI BIVENS, DARIN KNICK, DAVID
description	Methods for processing photomasks are provided herein. In some embodiments, a method for processing a photomask may include providing a photomask to a substrate support within a process chamber; providing a process gas to the process chamber having the photomask disposed therein; providing a negative or zero voltage to a substrate support cathode having the photomask disposed thereon; providing a source RF power to an anode coupled to the process chamber to ignite the process gas to form a plasma; and processing the photomask. La présente invention a trait à des procédés permettant de traiter des masques photographiques. Selon certains modes de réalisation, un procédé permettant de traiter un masque photographique peut inclure les étapes consistant à fournir un masque photographique à un support de substrat à l'intérieur d'une chambre de traitement ; à fournir un gaz de traitement à la chambre de traitement dans laquelle est disposé le masque photographique ; à fournir une tension négative ou nulle à la cathode d'un support de substrat sur lequel est disposé le masque photographique ; à fournir une puissance radioélectrique de source à une anode couplée à la chambre de traitement afin d'allumer le gaz de traitement en vue de former un plasma ; et à traiter le masque photographique.
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In some embodiments, a method for processing a photomask may include providing a photomask to a substrate support within a process chamber; providing a process gas to the process chamber having the photomask disposed therein; providing a negative or zero voltage to a substrate support cathode having the photomask disposed thereon; providing a source RF power to an anode coupled to the process chamber to ignite the process gas to form a plasma; and processing the photomask. La présente invention a trait à des procédés permettant de traiter des masques photographiques. Selon certains modes de réalisation, un procédé permettant de traiter un masque photographique peut inclure les étapes consistant à fournir un masque photographique à un support de substrat à l'intérieur d'une chambre de traitement ; à fournir un gaz de traitement à la chambre de traitement dans laquelle est disposé le masque photographique ; à fournir une tension négative ou nulle à la cathode d'un support de substrat sur lequel est disposé le masque photographique ; à fournir une puissance radioélectrique de source à une anode couplée à la chambre de traitement afin d'allumer le gaz de traitement en vue de former un plasma ; et à traiter le masque photographique.</description><language>eng ; fre</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CINEMATOGRAPHY ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110929&DB=EPODOC&CC=WO&NR=2011119471A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110929&DB=EPODOC&CC=WO&NR=2011119471A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OUYE, ALAN HIROSHI</creatorcontrib><creatorcontrib>BIVENS, DARIN</creatorcontrib><creatorcontrib>KNICK, DAVID</creatorcontrib><title>DC VOLTAGE CHARGING OF CATHODE FOR PLASMA STRIKING</title><description>Methods for processing photomasks are provided herein. 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Selon certains modes de réalisation, un procédé permettant de traiter un masque photographique peut inclure les étapes consistant à fournir un masque photographique à un support de substrat à l'intérieur d'une chambre de traitement ; à fournir un gaz de traitement à la chambre de traitement dans laquelle est disposé le masque photographique ; à fournir une tension négative ou nulle à la cathode d'un support de substrat sur lequel est disposé le masque photographique ; à fournir une puissance radioélectrique de source à une anode couplée à la chambre de traitement afin d'allumer le gaz de traitement en vue de former un plasma ; et à traiter le masque photographique.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDBycVYI8_cJcXR3VXD2cAxy9_RzV_B3U3B2DPHwd3FVcPMPUgjwcQz2dVQIDgny9AZK8zCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-HB_IwNDILA0MTd0NDImThUA464nWg</recordid><startdate>20110929</startdate><enddate>20110929</enddate><creator>OUYE, ALAN HIROSHI</creator><creator>BIVENS, DARIN</creator><creator>KNICK, DAVID</creator><scope>EVB</scope></search><sort><creationdate>20110929</creationdate><title>DC VOLTAGE CHARGING OF CATHODE FOR PLASMA STRIKING</title><author>OUYE, ALAN HIROSHI ; BIVENS, DARIN ; KNICK, DAVID</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2011119471A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2011</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OUYE, ALAN HIROSHI</creatorcontrib><creatorcontrib>BIVENS, DARIN</creatorcontrib><creatorcontrib>KNICK, DAVID</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OUYE, ALAN HIROSHI</au><au>BIVENS, DARIN</au><au>KNICK, DAVID</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>DC VOLTAGE CHARGING OF CATHODE FOR PLASMA STRIKING</title><date>2011-09-29</date><risdate>2011</risdate><abstract>Methods for processing photomasks are provided herein. In some embodiments, a method for processing a photomask may include providing a photomask to a substrate support within a process chamber; providing a process gas to the process chamber having the photomask disposed therein; providing a negative or zero voltage to a substrate support cathode having the photomask disposed thereon; providing a source RF power to an anode coupled to the process chamber to ignite the process gas to form a plasma; and processing the photomask. La présente invention a trait à des procédés permettant de traiter des masques photographiques. Selon certains modes de réalisation, un procédé permettant de traiter un masque photographique peut inclure les étapes consistant à fournir un masque photographique à un support de substrat à l'intérieur d'une chambre de traitement ; à fournir un gaz de traitement à la chambre de traitement dans laquelle est disposé le masque photographique ; à fournir une tension négative ou nulle à la cathode d'un support de substrat sur lequel est disposé le masque photographique ; à fournir une puissance radioélectrique de source à une anode couplée à la chambre de traitement afin d'allumer le gaz de traitement en vue de former un plasma ; et à traiter le masque photographique.</abstract><oa>free_for_read</oa></addata></record>
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subjects	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
title	DC VOLTAGE CHARGING OF CATHODE FOR PLASMA STRIKING
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