METHOD FOR FABRICATING NANOWIRES

The present invention provides the method for fabricating tungsten (24) and tungsten oxide (30) nanowires by selective CVD method process on a handle substrate (20) and insulating layer (22) with silicon nanostructure (28) in the presence tungsten hexafluoride precursor without the need to use of me...

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Hauptverfasser:	SITI AISHAH, MOHAMAD BADARUDDIN, BIEN, CHIA SHENG DANIEL, RAHIMAH, MOHD SAMAN
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MANUFACTURE OR TREATMENT THEREOF MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
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creator	SITI AISHAH, MOHAMAD BADARUDDIN BIEN, CHIA SHENG DANIEL RAHIMAH, MOHD SAMAN
description	The present invention provides the method for fabricating tungsten (24) and tungsten oxide (30) nanowires by selective CVD method process on a handle substrate (20) and insulating layer (22) with silicon nanostructure (28) in the presence tungsten hexafluoride precursor without the need to use of metal catalyst or mixed powder. This method uses an underlying silicon nano-structure material where the nanowires are laterally formed, in-planed with the substrate and also has uniform dimension. Tungsten nanowires fabricated can thereon be converted to tungsten oxides by oxidation or annealing process. La présente invention concerne un procédé de fabrication de nanofils de tungstène (24) et de nanofils d'oxyde de tungstène (30) par un procédé de dépôt chimique en phase vapeur sélectif, réalisé sur un substrat de traitement (20) comportant une couche isolante (22) avec une nanostructure de silicium (28) en présence d'un précurseur d'hexafluorure de tungstène, sans nécessité d'utiliser un catalyseur métallique ou un mélange de poudres. Le procédé de l'invention utilise un matériau en nanostructure de silicium sous-jacent où les nanofils sont formés latéralement, en plan avec le substrat, dans une dimension uniforme. Les nanofils de tungstène ainsi fabriqués peuvent y être transformés en oxydes de tungstène par oxydation ou recuit.
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This method uses an underlying silicon nano-structure material where the nanowires are laterally formed, in-planed with the substrate and also has uniform dimension. Tungsten nanowires fabricated can thereon be converted to tungsten oxides by oxidation or annealing process. La présente invention concerne un procédé de fabrication de nanofils de tungstène (24) et de nanofils d'oxyde de tungstène (30) par un procédé de dépôt chimique en phase vapeur sélectif, réalisé sur un substrat de traitement (20) comportant une couche isolante (22) avec une nanostructure de silicium (28) en présence d'un précurseur d'hexafluorure de tungstène, sans nécessité d'utiliser un catalyseur métallique ou un mélange de poudres. Le procédé de l'invention utilise un matériau en nanostructure de silicium sous-jacent où les nanofils sont formés latéralement, en plan avec le substrat, dans une dimension uniforme. 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This method uses an underlying silicon nano-structure material where the nanowires are laterally formed, in-planed with the substrate and also has uniform dimension. Tungsten nanowires fabricated can thereon be converted to tungsten oxides by oxidation or annealing process. La présente invention concerne un procédé de fabrication de nanofils de tungstène (24) et de nanofils d'oxyde de tungstène (30) par un procédé de dépôt chimique en phase vapeur sélectif, réalisé sur un substrat de traitement (20) comportant une couche isolante (22) avec une nanostructure de silicium (28) en présence d'un précurseur d'hexafluorure de tungstène, sans nécessité d'utiliser un catalyseur métallique ou un mélange de poudres. Le procédé de l'invention utilise un matériau en nanostructure de silicium sous-jacent où les nanofils sont formés latéralement, en plan avec le substrat, dans une dimension uniforme. 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This method uses an underlying silicon nano-structure material where the nanowires are laterally formed, in-planed with the substrate and also has uniform dimension. Tungsten nanowires fabricated can thereon be converted to tungsten oxides by oxidation or annealing process. La présente invention concerne un procédé de fabrication de nanofils de tungstène (24) et de nanofils d'oxyde de tungstène (30) par un procédé de dépôt chimique en phase vapeur sélectif, réalisé sur un substrat de traitement (20) comportant une couche isolante (22) avec une nanostructure de silicium (28) en présence d'un précurseur d'hexafluorure de tungstène, sans nécessité d'utiliser un catalyseur métallique ou un mélange de poudres. Le procédé de l'invention utilise un matériau en nanostructure de silicium sous-jacent où les nanofils sont formés latéralement, en plan avec le substrat, dans une dimension uniforme. 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subjects	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OR TREATMENT OF NANOSTRUCTURES MANUFACTURE OR TREATMENT THEREOF MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES METALLURGY NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS NANOTECHNOLOGY PERFORMING OPERATIONS SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRANSPORTING
title	METHOD FOR FABRICATING NANOWIRES
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