METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLED PLASMA REACTOR
Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connec...
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| creator | PAMARTHY, SHARMA, V FARR, JON, C KUMAR, AJAY NANGOY, ROY, C SINGH, SARAVJEET |
| description | Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
Des modes de réalisation de la présente invention se rapportent à un procédé et à un appareil destinés à fournir des gaz de traitement à une chambre de traitement à efficacité de dissociation de gaz améliorée. Un mode de réalisation de la présente invention se rapporte à un ensemble buse de déflecteur comprenant un corps extérieur délimitant un volume d'extension relié à une chambre de traitement. Un gaz de traitement s'écoule jusque dans la chambre de traitement à travers le volume d'extension qui est exposé à une source d'alimentation pour génération de plasma. |
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Des modes de réalisation de la présente invention se rapportent à un procédé et à un appareil destinés à fournir des gaz de traitement à une chambre de traitement à efficacité de dissociation de gaz améliorée. Un mode de réalisation de la présente invention se rapporte à un ensemble buse de déflecteur comprenant un corps extérieur délimitant un volume d'extension relié à une chambre de traitement. Un gaz de traitement s'écoule jusque dans la chambre de traitement à travers le volume d'extension qui est exposé à une source d'alimentation pour génération de plasma.</description><language>eng ; fre</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2011</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110331&DB=EPODOC&CC=WO&NR=2011037757A2$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20110331&DB=EPODOC&CC=WO&NR=2011037757A2$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PAMARTHY, SHARMA, V</creatorcontrib><creatorcontrib>FARR, JON, C</creatorcontrib><creatorcontrib>KUMAR, AJAY</creatorcontrib><creatorcontrib>NANGOY, ROY, C</creatorcontrib><creatorcontrib>SINGH, SARAVJEET</creatorcontrib><title>METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLED PLASMA REACTOR</title><description>Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
Des modes de réalisation de la présente invention se rapportent à un procédé et à un appareil destinés à fournir des gaz de traitement à une chambre de traitement à efficacité de dissociation de gaz améliorée. Un mode de réalisation de la présente invention se rapporte à un ensemble buse de déflecteur comprenant un corps extérieur délimitant un volume d'extension relié à une chambre de traitement. Un gaz de traitement s'écoule jusque dans la chambre de traitement à travers le volume d'extension qui est exposé à une source d'alimentation pour génération de plasma.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2011</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNikEKwjAQAHvxIOofFjwLbUV6XpJNs9B2Q5IqHqQUiSfRQv0_KvgAYYa5zDK7tBStaMDuo3PoMfYBjHiwXFsgY1gxdeoMNQbQHIIoxsjSAX_RvYp8JFDSu4Y0uAZDi-AJVRS_zha38T6nza-rbGsoKrtL03NI8zRe0yO9hpOUeVHk-6o6VFju_7vej7AzWQ</recordid><startdate>20110331</startdate><enddate>20110331</enddate><creator>PAMARTHY, SHARMA, V</creator><creator>FARR, JON, C</creator><creator>KUMAR, AJAY</creator><creator>NANGOY, ROY, C</creator><creator>SINGH, SARAVJEET</creator><scope>EVB</scope></search><sort><creationdate>20110331</creationdate><title>METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLED PLASMA REACTOR</title><author>PAMARTHY, SHARMA, V ; FARR, JON, C ; KUMAR, AJAY ; NANGOY, ROY, C ; SINGH, SARAVJEET</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2011037757A23</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2011</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>PAMARTHY, SHARMA, V</creatorcontrib><creatorcontrib>FARR, JON, C</creatorcontrib><creatorcontrib>KUMAR, AJAY</creatorcontrib><creatorcontrib>NANGOY, ROY, C</creatorcontrib><creatorcontrib>SINGH, SARAVJEET</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>PAMARTHY, SHARMA, V</au><au>FARR, JON, C</au><au>KUMAR, AJAY</au><au>NANGOY, ROY, C</au><au>SINGH, SARAVJEET</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLED PLASMA REACTOR</title><date>2011-03-31</date><risdate>2011</risdate><abstract>Embodiments of the present invention relate to method and apparatus for providing processing gases to a process chamber with improved plasma dissociation efficiency. One embodiment of the present invention provides a baffle nozzle assembly comprising an outer body defining an extension volume connected to a processing chamber. A processing gas is flown to the processing chamber through the extension volume which is exposed to power source for plasma generation.
Des modes de réalisation de la présente invention se rapportent à un procédé et à un appareil destinés à fournir des gaz de traitement à une chambre de traitement à efficacité de dissociation de gaz améliorée. Un mode de réalisation de la présente invention se rapporte à un ensemble buse de déflecteur comprenant un corps extérieur délimitant un volume d'extension relié à une chambre de traitement. Un gaz de traitement s'écoule jusque dans la chambre de traitement à travers le volume d'extension qui est exposé à une source d'alimentation pour génération de plasma.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | METHOD AND APPARATUS FOR HIGH EFFICIENCY GAS DISSOCIATION IN INDUCTIVE COUPLED PLASMA REACTOR |
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