AMORPHOUS MULTICOMPONENT DIELECTRIC BASED ON THE MIXTURE OF HIGH BAND GAP AND HIGH K MATERIALS, RESPECTIVE DEVICES AND MANUFACTURE

High performance thin-film, transistors entirely processed at temperatures not exceeding 150°C, using amorphous multi component dielectrics based on t.he mixture of high band gap and high dielectric constant ( K) materials are presented in this invention. The invention relates to the use of sputtere...

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Bibliographische Detailangaben

Hauptverfasser:	DE PAIVA MARTINS, RODRIGO FERRAO, CORREIA FORTUNATO, ELVIRA MARIA, GONCALVES, GONCALO PEDRO, CANDIDO BARQUINHA, PEDRO MIGUEL, KUSCER HROVATIN, DANJELA, KOSEC, MARIJA, NUNES PEREIRA, LUIS MIGUEL
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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