ALUMINUM BASE MATERIAL, METAL SUBSTRATE HAVING INSULATING LAYER EMPLOYING THE ALUMINUM BASE MATERIAL, SEMICONDUCTOR ELEMENT, AND SOLAR BATTERY

A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the metal substrate are provided. The...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	KAITO, RYOUZOU, SAWADA, HIROKAZU, YUUYA, SHIGENORI
Format:	Patent
Sprache:	eng ; fre
Schlagworte:	ALLOYS APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FERROUS OR NON-FERROUS ALLOYS INSULATORS METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES TREATMENT OF ALLOYS OR NON-FERROUS METALS
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

container_end_page
container_issue
container_start_page
container_title
container_volume
creator	KAITO, RYOUZOU SAWADA, HIROKAZU YUUYA, SHIGENORI
description	A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the metal substrate are provided. The metal substrate with an insulating layer is formed by administering anodic oxidation on at least one surface of the Al base material. The Al base material includes only precipitous particles of a substance which is anodized by anodic oxidation as precipitous particles within an Al matrix. La présente invention concerne un substrat métallique comportant une couche isolante. Le substrat peut être produit par un procédé simple, résiste à la chaleur lors du traitement des semi-conducteurs, présente une résistance supérieure à la tension et un faible courant de fuite. L'invention concerne également un matériau à base d'Al qui réalise le substrat de métal. Le substrat de métal comportant une couche isolante est formé par administration d'une oxydation anodique sur au moins une surface du matériau à base d'Al. Le matériau à base d'Al ne comprend que des particules précipitées d'une substance anodisée par oxydation anodique en tant que particules précipitées dans une matrice d'Al.
format	Patent
fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_WO2010128687A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>WO2010128687A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_WO2010128687A13</originalsourceid><addsrcrecordid>eNqNjM0KgkAUhd20iOodLrQ1UINye9VbDsxPzNwpXInEtIoS7Dl65hTaBq3OD9858-iN0iuhvYICHYFCJitQxqCIUYLzhWM7llDjWegjCO28RJ6sxIYskDpJ00yZa4Jfb46UKI2ufMlm3EhSpDkG1BU4I9GOPI9ss4xmt-4-hNVXF9H6QFzWm9A_2zD03TU8wqu9mCxJkzTLd_ke0-1_1AfhskEI</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ALUMINUM BASE MATERIAL, METAL SUBSTRATE HAVING INSULATING LAYER EMPLOYING THE ALUMINUM BASE MATERIAL, SEMICONDUCTOR ELEMENT, AND SOLAR BATTERY</title><source>esp@cenet</source><creator>KAITO, RYOUZOU ; SAWADA, HIROKAZU ; YUUYA, SHIGENORI</creator><creatorcontrib>KAITO, RYOUZOU ; SAWADA, HIROKAZU ; YUUYA, SHIGENORI</creatorcontrib><description>A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the metal substrate are provided. The metal substrate with an insulating layer is formed by administering anodic oxidation on at least one surface of the Al base material. The Al base material includes only precipitous particles of a substance which is anodized by anodic oxidation as precipitous particles within an Al matrix. La présente invention concerne un substrat métallique comportant une couche isolante. Le substrat peut être produit par un procédé simple, résiste à la chaleur lors du traitement des semi-conducteurs, présente une résistance supérieure à la tension et un faible courant de fuite. L'invention concerne également un matériau à base d'Al qui réalise le substrat de métal. Le substrat de métal comportant une couche isolante est formé par administration d'une oxydation anodique sur au moins une surface du matériau à base d'Al. Le matériau à base d'Al ne comprend que des particules précipitées d'une substance anodisée par oxydation anodique en tant que particules précipitées dans une matrice d'Al.</description><language>eng ; fre</language><subject>ALLOYS ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CABLES ; CHEMISTRY ; CONDUCTORS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROFORMING ; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES ; FERROUS OR NON-FERROUS ALLOYS ; INSULATORS ; METALLURGY ; PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS ; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES ; SEMICONDUCTOR DEVICES ; TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><creationdate>2010</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101111&DB=EPODOC&CC=WO&NR=2010128687A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20101111&DB=EPODOC&CC=WO&NR=2010128687A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KAITO, RYOUZOU</creatorcontrib><creatorcontrib>SAWADA, HIROKAZU</creatorcontrib><creatorcontrib>YUUYA, SHIGENORI</creatorcontrib><title>ALUMINUM BASE MATERIAL, METAL SUBSTRATE HAVING INSULATING LAYER EMPLOYING THE ALUMINUM BASE MATERIAL, SEMICONDUCTOR ELEMENT, AND SOLAR BATTERY</title><description>A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the metal substrate are provided. The metal substrate with an insulating layer is formed by administering anodic oxidation on at least one surface of the Al base material. The Al base material includes only precipitous particles of a substance which is anodized by anodic oxidation as precipitous particles within an Al matrix. La présente invention concerne un substrat métallique comportant une couche isolante. Le substrat peut être produit par un procédé simple, résiste à la chaleur lors du traitement des semi-conducteurs, présente une résistance supérieure à la tension et un faible courant de fuite. L'invention concerne également un matériau à base d'Al qui réalise le substrat de métal. Le substrat de métal comportant une couche isolante est formé par administration d'une oxydation anodique sur au moins une surface du matériau à base d'Al. Le matériau à base d'Al ne comprend que des particules précipitées d'une substance anodisée par oxydation anodique en tant que particules précipitées dans une matrice d'Al.</description><subject>ALLOYS</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CABLES</subject><subject>CHEMISTRY</subject><subject>CONDUCTORS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>ELECTROFORMING</subject><subject>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</subject><subject>FERROUS OR NON-FERROUS ALLOYS</subject><subject>INSULATORS</subject><subject>METALLURGY</subject><subject>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</subject><subject>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TREATMENT OF ALLOYS OR NON-FERROUS METALS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2010</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjM0KgkAUhd20iOodLrQ1UINye9VbDsxPzNwpXInEtIoS7Dl65hTaBq3OD9858-iN0iuhvYICHYFCJitQxqCIUYLzhWM7llDjWegjCO28RJ6sxIYskDpJ00yZa4Jfb46UKI2ufMlm3EhSpDkG1BU4I9GOPI9ss4xmt-4-hNVXF9H6QFzWm9A_2zD03TU8wqu9mCxJkzTLd_ke0-1_1AfhskEI</recordid><startdate>20101111</startdate><enddate>20101111</enddate><creator>KAITO, RYOUZOU</creator><creator>SAWADA, HIROKAZU</creator><creator>YUUYA, SHIGENORI</creator><scope>EVB</scope></search><sort><creationdate>20101111</creationdate><title>ALUMINUM BASE MATERIAL, METAL SUBSTRATE HAVING INSULATING LAYER EMPLOYING THE ALUMINUM BASE MATERIAL, SEMICONDUCTOR ELEMENT, AND SOLAR BATTERY</title><author>KAITO, RYOUZOU ; SAWADA, HIROKAZU ; YUUYA, SHIGENORI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_WO2010128687A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; fre</language><creationdate>2010</creationdate><topic>ALLOYS</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CABLES</topic><topic>CHEMISTRY</topic><topic>CONDUCTORS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>ELECTROFORMING</topic><topic>ELECTROLYTIC OR ELECTROPHORETIC PROCESSES</topic><topic>FERROUS OR NON-FERROUS ALLOYS</topic><topic>INSULATORS</topic><topic>METALLURGY</topic><topic>PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS</topic><topic>SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TREATMENT OF ALLOYS OR NON-FERROUS METALS</topic><toplevel>online_resources</toplevel><creatorcontrib>KAITO, RYOUZOU</creatorcontrib><creatorcontrib>SAWADA, HIROKAZU</creatorcontrib><creatorcontrib>YUUYA, SHIGENORI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KAITO, RYOUZOU</au><au>SAWADA, HIROKAZU</au><au>YUUYA, SHIGENORI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ALUMINUM BASE MATERIAL, METAL SUBSTRATE HAVING INSULATING LAYER EMPLOYING THE ALUMINUM BASE MATERIAL, SEMICONDUCTOR ELEMENT, AND SOLAR BATTERY</title><date>2010-11-11</date><risdate>2010</risdate><abstract>A metal substrate with an insulating layer, which is capable of being produced by a simple process, exhibits heat resistance during semiconductor processing, is superior in voltage resistance, and has small leakage current, and an Al base material that realizes the metal substrate are provided. The metal substrate with an insulating layer is formed by administering anodic oxidation on at least one surface of the Al base material. The Al base material includes only precipitous particles of a substance which is anodized by anodic oxidation as precipitous particles within an Al matrix. La présente invention concerne un substrat métallique comportant une couche isolante. Le substrat peut être produit par un procédé simple, résiste à la chaleur lors du traitement des semi-conducteurs, présente une résistance supérieure à la tension et un faible courant de fuite. L'invention concerne également un matériau à base d'Al qui réalise le substrat de métal. Le substrat de métal comportant une couche isolante est formé par administration d'une oxydation anodique sur au moins une surface du matériau à base d'Al. Le matériau à base d'Al ne comprend que des particules précipitées d'une substance anodisée par oxydation anodique en tant que particules précipitées dans une matrice d'Al.</abstract><oa>free_for_read</oa></addata></record>
fulltext	fulltext_linktorsrc
identifier
ispartof
issn
language	eng ; fre
recordid	cdi_epo_espacenet_WO2010128687A1
source	esp@cenet
subjects	ALLOYS APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CABLES CHEMISTRY CONDUCTORS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FERROUS OR NON-FERROUS ALLOYS INSULATORS METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING ORDIELECTRIC PROPERTIES SEMICONDUCTOR DEVICES TREATMENT OF ALLOYS OR NON-FERROUS METALS
title	ALUMINUM BASE MATERIAL, METAL SUBSTRATE HAVING INSULATING LAYER EMPLOYING THE ALUMINUM BASE MATERIAL, SEMICONDUCTOR ELEMENT, AND SOLAR BATTERY
url	https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T00%3A09%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KAITO,%20RYOUZOU&rft.date=2010-11-11&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EWO2010128687A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true